VS-4C10EP12LHM3

Vishay Semiconductors
78-VS-4C10EP12LHM3
VS-4C10EP12LHM3

Mfr.:

Description:
SiC Schottky Diodes SicG4TO-2472L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
500
Expected 14/08/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp108.058 Rp108.058
Rp86.593 Rp865.930
Rp71.366 Rp7.136.600
Rp60.542 Rp30.271.000
Rp53.203 Rp53.203.000
25.000 Quote

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247AD-2
Single
10 A
1.2 kV
1.34 V
50 A
162 uA
- 55 C
+ 175 C
VS-4C10EP12LHM3
Brand: Vishay Semiconductors
Pd - Power Dissipation: 187 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 500
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
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Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.