VS-4C12ET07S2LHM3

Vishay Semiconductors
78-VS-4C12ET07S2LHM3
VS-4C12ET07S2LHM3

Mfr.:

Description:
SiC Schottky Diodes SiCG4D2PAK2L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
800
Expected 14/08/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp87.510 Rp87.510
Rp57.973 Rp579.730
Rp45.315 Rp4.531.500
Rp40.361 Rp20.180.500
Rp34.307 Rp27.445.600
Rp33.023 Rp79.255.200
Rp32.289 Rp180.818.400

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
TO-263AB-2
Single
12 A
650 V
1.3 V
72 A
84 uA
-55 C
+ 175 C
VS-4C12ET07S2LHM3
Brand: Vishay Semiconductors
Pd - Power Dissipation: 91 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 800
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
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Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.