VS-4C12ET07THM3

Vishay Semiconductors
78-VS-4C12ET07THM3
VS-4C12ET07THM3

Mfr.:

Description:
SiC Schottky Diodes SicG4TO-2202L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.000
Expected 14/08/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp89.345 Rp89.345
Rp58.340 Rp583.400
Rp45.682 Rp4.568.200
Rp39.811 Rp19.905.500
Rp33.573 Rp33.573.000
Rp33.206 Rp66.412.000

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220AC-2
Single
12 A
650 V
1.3 V
72 A
84 uA
-55 C
+ 175 C
VS-4C12ET07THM3
Brand: Vishay Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: HK
Pd - Power Dissipation: 91 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.