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VSLY5850

Name: Vishay VSLY5850
Brand: Vishay Semiconductors
SKU: 782-VSLY5850
Price: 20181 IDR
Availability: InStock

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Mouser No:

782-VSLY5850

Mfr. No:

VSLY5850

Mfr.:

Vishay Semiconductors

Description:

Infrared Emitters 850nm,T-1.75 600mW/sr,+/-3deg.

Datasheet:

VSLY5850 Datasheet

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In Stock: 9.359

Stock:: 9.359 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp20.181	Rp20.181
	Rp15.484	Rp154.840
	Rp13.374	Rp1.337.400
	Rp12.182	Rp6.091.000
	Rp11.503	Rp11.503.000
	Rp11.136	Rp22.272.000
	Rp9.815	Rp39.260.000
	Rp9.797	Rp117.564.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	Infrared Emitters
RoHS:
Mounting Style:	Through Hole
Wavelength:	850 nm
Radiant Intensity:	600 mW/sr
Beam Angle:	3 deg
If - Forward Current:	100 mA
Vf - Forward Voltage:	1.65 V
Power Rating:	190 mW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Bulk
Brand:	Vishay Semiconductors
Fall Time:	10 ns
Illumination Colour:	Infrared
Lens Shape:	Dome
Product Type:	IR Emitters (IR LEDs)
Rise Time:	10 ns
Factory Pack Quantity:	4000
Subcategory:	Infrared Data Communications
Tradename:	SurfLight
Unit Weight:	449,665 mg

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Datasheet

VSLY5850 Datasheet

Application Notes

Processing Instructions for Mounting of Through-Hole LEDs

Models

PCN

Change of Production Location for 3mm and TELUX Devices (PDF)

REACH Certificate (PDF)

CNHTS:: 8541410090
CAHTS:: 8541410000
USHTS:: 8541410000
JPHTS:: 854141000
TARIC:: 8541410000
MXHTS:: 8541410100
BRHTS:: 85414011
ECCN:: EAR99

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

VSLY850 High Speed IR Emitting Diodes

Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes are infrared, 850nm emitting diodes based on GaAlAs surface emitter chip technology. Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes have extreme high radiant intensity, high optical power, high speed, and are molded in clear, untinted plastic packages. The VSLY3850 comes in a T-1 plastic package, and the VSLY5850 also has a parabolic lens.