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WST41H0D-GP4

Name: MACOM WST41H0D-GP4
Brand: MACOM
SKU: 937-WST41H0D-GP4
Price: 6678861 IDR
Availability: InStock

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Mouser No:

937-WST41H0D-GP4

Mfr. No:

WST41H0D-GP4

Mfr.:

MACOM

Description:

GaN FETs Die, DC - 4 GHz, 120W, G28V5-1C

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

WST41H0D-GP4 Datasheet (PDF)

ECAD Model:

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Learn more about MACOM WST41H0D-GP4

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This product may require additional documentation to export from the United States.

In Stock: 50

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp6.678.861	Rp66.788.610

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	84 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 2 V
Vgs th - Gate-Source Threshold Voltage:	- 2 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Brand:	MACOM
Configuration:	Single
Gain:	17.5 dB
Maximum Operating Frequency:	4 GHz
Minimum Operating Frequency:	DC
Output Power:	223.87 W
Product:	GaN FETs
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN, SiC
Type:	GaN on SiC Transistor

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Datasheet

WST41H0D-GP4 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.a.4

GaN on SiC Transistors

MACOM GaN on SiC Transistors are next-generation RF power transistors that deliver industry-leading gain, efficiency, and power in the same compact footprint. These transistors feature 28V operating voltage, up to 8GHz frequency, high efficiency, and high breakdown voltage. The GaN on SiC transistors support high power, gain, and efficiency, while keeping the same footprint, versus previous generations. These transistors are 100% pass-biased JEDEC HAST (JESD22-A110E) and pass-Highly Accelerated Temperature and Humidity Stress Test (HAST). The GaN on SiC transistors are ideal for 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and general amplification.