It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

XPW4R10ANB,L1XHQ

Name: Toshiba XPW4R10ANB,L1XHQ
Brand: Toshiba
SKU: 757-XPW4R10ANBL1XHQ
Price: 55955 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-XPW4R10ANBL1XHQ

Mfr. No:

XPW4R10ANB,L1XHQ

Mfr.:

Toshiba

Description:

MOSFETs POWER MOSFET TRANSISTOR DSOP Advance(WF)M PD=170W F=1MHZ

Datasheet:

XPW4R10ANB,L1XHQ Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba XPW4R10ANB,L1XHQ

In Stock: 4.754

Stock:: 4.754 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp55.955	Rp55.955
	Rp36.325	Rp363.250
	Rp26.051	Rp2.605.100
	Rp21.832	Rp10.916.000
	Rp19.630	Rp19.630.000
Full Reel (Order in multiples of 5000)
	Rp19.630	Rp98.150.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	4.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	75 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	170 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Country of Assembly:	JP
Country of Diffusion:	JP
Country of Origin:	JP
Fall Time:	22 ns
Product Type:	MOSFETs
Rise Time:	21 ns
Series:	U-MOSVIII-H
Factory Pack Quantity:	5000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	89 ns
Typical Turn-On Delay Time:	52 ns
Unit Weight:	104 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

XPW4R10ANB,L1XHQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Selection Guide 2024 - MOSFETs

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Automotive U-MOSVIII-H Power MOSFETs

Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. These devices feature low on-resistance with proprietary technology using a Cu connector. The Toshiba U-MOSVIII-H Power MOSFETs have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance.