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NVDSH20120C

Name: onsemi NVDSH20120C
Brand: onsemi
SKU: 863-NVDSH20120C
Price: 214832 IDR
Availability: InStock

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Mouser No:

863-NVDSH20120C

Mfr. No:

NVDSH20120C

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO247-2L

Datasheet:

NVDSH20120C Datasheet

ECAD Model:

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In Stock: 330

Stock:: 330 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp214.832	Rp214.832
	Rp130.440	Rp1.304.400
	Rp120.350	Rp14.442.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.38 V
Ifsm - Forward Surge Current:	119 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	NVDSH20120C
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	214 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	1.2 kV

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Datasheet

NVDSH20120C Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.