STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
STMicroelectronics SiC Schottky Diodes Dual 650V Pwr Schtky Silicn Carbide Diode
Datasheet
730In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-3 Dual 10 A 650 V 1.56 V 470 A 425 uA - 40 C + 175 C STPSC Tube
STMicroelectronics SiC Schottky Diodes Dual 650V Pwr Schtky Silicn Carbide Diod
Datasheet
632In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-3 Dual 6 A 650 V 1.56 V 400 A 250 uA - 40 C + 175 C STPSC Tube
STMicroelectronics SiC Schottky Diodes Dual 650V Pwr Schtky Silicn Carbide Diode
Datasheet
2.000Expected 27/04/2026
Min.: 1
Mult.: 1

Through Hole TO-220-3 Dual 8 A 650 V 1.56 V 420 A 335 uA - 40 C + 175 C STPSC Tube