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GAN041-650WSBQ

Name: Nexperia GAN041-650WSBQ
Brand: Nexperia
SKU: 771-GAN041-650WSBQ
Price: 216299 IDR
Availability: InStock

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Mouser No:

771-GAN041-650WSBQ

Mfr. No:

GAN041-650WSBQ

Mfr.:

Nexperia

Description:

GaN FETs SOT247 650V 47.2A N-CH MOSFET

Datasheet:

GAN041-650WSBQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia GAN041-650WSBQ

In Stock: 239

Stock:: 239 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp216.299	Rp216.299
	Rp190.798	Rp1.907.980
	Rp131.174	Rp13.117.400
	Rp129.706	Rp64.853.000
Full Reel (Order in multiples of 30)
	Rp190.798	Rp5.723.940

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	GaN FETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	SOT-429-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	47.2 A
Rds On - Drain-Source Resistance:	41 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	187 W
Channel Mode:	Enhancement
Brand:	Nexperia
Configuration:	Single
Fall Time:	10 ns
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Rise Time:	10 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	GaN
Part # Aliases:	934661752127
Unit Weight:	123 mg

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GAN041-650WSB Gallium Nitride (GaN) FET

Nexperia GAN041-650WSB Gallium Nitride (GaN) FET offers a 650V drain-source voltage, 47.2A drain current rating and 41mΩ maximum resistance. The GAN041 comes in a TO-247 package and is a normally-off device that combines high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies. The combination of these technologies provides superior reliability and performance. Nexperia GAN041-650WSB GaN FET is ideal for bridgeless totem-pole PFC, servo motor drives and hard- and soft-switching converters for industrial and datacom power.

GaN FETs for Industrial Applications

Nexperia GaN FETs for Industrial Applications offer efficient power use and efficiencies in power conversion and control. For some applications, power conversion efficiency and power density are critical for market adoption. Prime examples include high-voltage communications and industrial infrastructure sectors. GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system costs.