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GCMX040B120S1-E1

Name: SemiQ GCMX040B120S1-E1
Brand: SemiQ
SKU: 148-GCMX040B120S1-E1
Price: 432415 IDR
Availability: InStock

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Mouser No:

148-GCMX040B120S1-E1

Mfr. No:

GCMX040B120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V SiC MOSFET Power Module

Datasheet:

GCMX040B120S1-E1 Datasheet (PDF)

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In Stock: 18

Stock:: 18 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp432.415	Rp432.415
	Rp312.616	Rp3.126.160
	Rp255.376	Rp25.537.600

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	57 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	242 W
Packaging:	Tube
Brand:	SemiQ
Fall Time:	12 ns
Product Type:	MOSFET Modules
Rise Time:	5 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	15 ns
Vf - Forward Voltage:	3.8 V

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Datasheet

GCMX040B120S1-E1 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GCMX040B120S1-E1 1200V SiC MOSFET Power Module

SemiQ GCMX040B120S1-E1 1200V SiC COPACK Power Module is simple to drive, very rugged, and easy to mount with high-speed switching SiC MOSFETs. The device delivers low switching losses and junction-to-case thermal resistance. The SemiQ GCMX040B120S1-E1 Power Module has a low Q_RR at high temperatures and permits direct mounting to the heatsink in an isolated package.

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.