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NVHL025N065SC1

Name: onsemi NVHL025N065SC1
Brand: onsemi
SKU: 863-NVHL025N065SC1
Price: 495525 IDR
Availability: InStock

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Mouser No:

863-NVHL025N065SC1

Mfr. No:

NVHL025N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-3L 650V

Datasheet:

NVHL025N065SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVHL025N065SC1

In Stock: 448

Stock:: 448 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp495.525	Rp495.525
	Rp372.974	Rp3.729.740
	Rp362.884	Rp43.546.080

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	99 A
Rds On - Drain-Source Resistance:	19 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	164 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	348 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	27 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	51 ns
Series:	NVHL025N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	18 ns

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Datasheet

NVHL025N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVHL025N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVHL025N065SC1 silicon carbide (SiC) MOSFETs are EliteSiC 25mΩ, 650V MOSFETs that provide superior switching performance. The onsemi NVHL025N065SC1 ensures greater reliability compared to silicon and a low ON resistance. The MOSFETs' compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).