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NTH4L025N065SC1

Name: onsemi NTH4L025N065SC1
Brand: onsemi
SKU: 863-NTH4L025N065SC1
Price: 384349 IDR
Availability: InStock

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Mouser No:

863-NTH4L025N065SC1

Mfr. No:

NTH4L025N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 650V

Datasheet:

NTH4L025N065SC1 Datasheet

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In Stock: 449

Stock:: 449 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp384.349	Rp384.349
	Rp288.399	Rp2.883.990
	Rp251.524	Rp30.182.880

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	99 A
Rds On - Drain-Source Resistance:	28.5 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	164 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	348 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	27 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	19 ns
Series:	NTH4L025N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns

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Datasheet

NTH4L025N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

NTH4L025N065SC1 19mohm Silicon Carbide MOSFET

onsemi NTH4L025N065SC1 19mohm Silicon Carbide MOSFET is housed in a TO-247-4L package and designed to be fast and rugged. The onsemi NTH4L025N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.