OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
Infineon Technologies MOSFETs IFX FET 60V
Datasheet
10.000Expected 09/04/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 5.000

Si SMD/SMT N-Channel 1 Channel 60 V 137 A 3 mOhms - 20 V, 20 V 3.3 V 39 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IPP020N06NXKSA1
Infineon Technologies MOSFETs IFX FET 60V
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 120 A 2 mOhms - 20 V, 20 V 3.3 V 106 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IPP027N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.7 mOhms - 20 V, 20 V 3.8 V 99 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IPP040N06NXKSA1
Infineon Technologies MOSFETs IFX FET 60V
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 69 A 4 mOhms - 20 V, 20 V 3.3 V 38 nC - 55 C + 175 C 36 W Enhancement Tube
Infineon Technologies IPP020N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Non-Stocked Lead-Time 13 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2 mOhms - 20 V, 20 V 3.8 V 178 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies IPP023N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.3 mOhms - 20 V, 20 V 3.8 V 133 nC - 55 C + 175 C 300 W Enhancement Tube