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SIZ340BDT-T1-GE3

Name: Vishay SIZ340BDT-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIZ340BDT-T1-GE3
Price: 20548 IDR
Availability: InStock

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Mouser No:

78-SIZ340BDT-T1-GE3

Mfr. No:

SIZ340BDT-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAIR3X3 2NCH 30V 16.9A

Datasheet:

SIZ340BDT-T1-GE3 Datasheet

ECAD Model:

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In Stock: 6.418

Stock:: 6.418 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp20.548	Rp20.548
	Rp12.897	Rp128.970
	Rp8.458	Rp845.800
	Rp6.550	Rp3.275.000
	Rp6.054	Rp6.054.000
Full Reel (Order in multiples of 3000)
	Rp5.137	Rp15.411.000
	Rp4.862	Rp29.172.000
	Rp4.476	Rp40.284.000
	Rp4.330	Rp103.920.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAIR-3x3
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	36 A, 69.3 A
Rds On - Drain-Source Resistance:	4.31 mOhms, 8.56 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	8.4 nC, 15.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	16.7 W, 31 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Fall Time:	5 ns, 7 ns
Forward Transconductance - Min:	30 S, 60 S
Product Type:	MOSFETs
Rise Time:	6 ns, 7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	18 ns, 22 ns
Typical Turn-On Delay Time:	8 ns, 12 ns
Unit Weight:	143,050 mg

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Datasheet

SIZ340BDT-T1-GE3 Datasheet

PCN

Product Change Notification 2024-01-09 (PDF)

Technical Resources

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SiZ340BDT Dual N-Channel 30V MOSFET

Vishay / Siliconix SiZ340BDT Dual N-Channel 30V MOSFET features a dual configuration design with TrenchFET® Gen IV power. The module offers 30V_DS drain-source voltage and 150A pulsed drain current in a temperature range of -55°C to +150°C. Vishay / Siliconix SiZ340BDT Dual N-Channel 30V MOSFET is halogen-free and RoHS-compliant. Typical applications are CPU core power, synchronous buck converters, telecom DC/DC, and computers.