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NVH4L060N065SC1

Name: onsemi NVH4L060N065SC1
Brand: onsemi
SKU: 863-NVH4L060N065SC1
Price: 269319 IDR
Availability: InStock

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Mouser No:

863-NVH4L060N065SC1

Mfr. No:

NVH4L060N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 650V

Datasheet:

NVH4L060N065SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVH4L060N065SC1

In Stock: 36

Stock:: 36 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 36 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp269.319	Rp269.319
	Rp215.382	Rp2.153.820
	Rp174.837	Rp20.980.440
	Rp174.104	Rp88.793.040
	Rp173.370	Rp176.837.400
2.520	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	47 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	74 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	176 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance - Min:	12 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Series:	NVH4L060N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	11 ns

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Filter Document:

Datasheet

NVH4L060N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L060N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).