|
|
SiC Schottky Diodes RECT 1.2KV 5A SM SIC SKY
- SCS205KNHRTRL
- ROHM Semiconductor
-
1:
Rp95.399
-
473In Stock
-
New Product
|
Mouser Part No
755-SCS205KNHRTRL
New Product
|
ROHM Semiconductor
|
SiC Schottky Diodes RECT 1.2KV 5A SM SIC SKY
|
|
473In Stock
|
|
|
Rp95.399
|
|
|
Rp69.164
|
|
|
Rp54.121
|
|
|
Rp49.167
|
|
|
Rp45.131
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SiC Schottky Diodes RECT 650V 15A SM SIC SKY
- SCS215ANHRTRL
- ROHM Semiconductor
-
1:
Rp110.810
-
460In Stock
-
New Product
|
Mouser Part No
755-SCS215ANHRTRL
New Product
|
ROHM Semiconductor
|
SiC Schottky Diodes RECT 650V 15A SM SIC SKY
|
|
460In Stock
|
|
|
Rp110.810
|
|
|
Rp76.870
|
|
|
Rp68.431
|
|
|
Rp64.394
|
|
|
Rp51.736
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
ESD Protection Diodes / TVS Diodes 13V 600W, Highly Reliable, Transient Voltage Suppressor
- VS13VUA1LBTBR1
- ROHM Semiconductor
-
1:
Rp11.741
-
3.000In Stock
-
New Product
|
Mouser Part No
755-VS13VUA1LBTBR1
New Product
|
ROHM Semiconductor
|
ESD Protection Diodes / TVS Diodes 13V 600W, Highly Reliable, Transient Voltage Suppressor
|
|
3.000In Stock
|
|
|
Rp11.741
|
|
|
Rp7.925
|
|
|
Rp6.421
|
|
|
Rp6.128
|
|
|
Rp4.843
|
|
|
View
|
|
|
Rp5.852
|
|
|
Rp4.660
|
|
|
Rp4.293
|
|
|
Rp4.275
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
ESD Protection Diodes / TVS Diodes 30V 600W, Highly Reliable, Transient Voltage Suppressor
- VS30VUA1LBTBR1
- ROHM Semiconductor
-
1:
Rp11.741
-
1.818In Stock
-
New Product
|
Mouser Part No
755-VS30VUA1LBTBR1
New Product
|
ROHM Semiconductor
|
ESD Protection Diodes / TVS Diodes 30V 600W, Highly Reliable, Transient Voltage Suppressor
|
|
1.818In Stock
|
|
|
Rp11.741
|
|
|
Rp7.925
|
|
|
Rp6.421
|
|
|
Rp6.128
|
|
|
Rp5.265
|
|
|
View
|
|
|
Rp5.852
|
|
|
Rp5.119
|
|
|
Rp4.880
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
ESD Protection Diodes / TVS Diodes 5V 600W, Highly Reliable, Transient Voltage Suppressor
- VS5V0UA1LBTBR1
- ROHM Semiconductor
-
1:
Rp11.741
-
2.890In Stock
-
New Product
|
Mouser Part No
755-VS5V0UA1LBTBR1
New Product
|
ROHM Semiconductor
|
ESD Protection Diodes / TVS Diodes 5V 600W, Highly Reliable, Transient Voltage Suppressor
|
|
2.890In Stock
|
|
|
Rp11.741
|
|
|
Rp7.925
|
|
|
Rp6.421
|
|
|
Rp6.128
|
|
|
Rp5.430
|
|
|
View
|
|
|
Rp5.852
|
|
|
Rp5.247
|
|
|
Rp4.917
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers 100V 8A, TO-277GE, Ultra low IR SBD
- RB048RSM10STL1
- ROHM Semiconductor
-
1:
Rp29.721
-
2.932In Stock
|
Mouser Part No
755-RB048RSM10STL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers 100V 8A, TO-277GE, Ultra low IR SBD
|
|
2.932In Stock
|
|
|
Rp29.721
|
|
|
Rp19.263
|
|
|
Rp13.943
|
|
|
Rp11.026
|
|
|
View
|
|
|
Rp9.393
|
|
|
Rp10.347
|
|
|
Rp9.522
|
|
|
Rp9.393
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Schottky Barrier Diode Super Low IR, 100V 2A, SMBP
- RB068LB100TBR1
- ROHM Semiconductor
-
1:
Rp20.181
-
5.857In Stock
|
Mouser Part No
755-RB068LB100TBR1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Schottky Barrier Diode Super Low IR, 100V 2A, SMBP
|
|
5.857In Stock
|
|
|
Rp20.181
|
|
|
Rp13.521
|
|
|
Rp9.338
|
|
|
Rp7.265
|
|
|
Rp6.109
|
|
|
View
|
|
|
Rp6.586
|
|
|
Rp5.614
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers 150V 5A, TO-277GE, Ultra low IR SBD
- RB078RSM15STFTL1
- ROHM Semiconductor
-
1:
Rp36.875
-
7.587In Stock
|
Mouser Part No
755-RB078RSM15STFTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers 150V 5A, TO-277GE, Ultra low IR SBD
|
|
7.587In Stock
|
|
|
Rp36.875
|
|
|
Rp22.566
|
|
|
Rp14.915
|
|
|
Rp12.163
|
|
|
View
|
|
|
Rp10.237
|
|
|
Rp10.953
|
|
|
Rp10.622
|
|
|
Rp10.237
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers 150V 5A, TO-277GE, Ultra low IR SBD
- RB078RSM15STL1
- ROHM Semiconductor
-
1:
Rp25.134
-
7.390In Stock
|
Mouser Part No
755-RB078RSM15STL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers 150V 5A, TO-277GE, Ultra low IR SBD
|
|
7.390In Stock
|
|
|
Rp25.134
|
|
|
Rp17.282
|
|
|
Rp12.934
|
|
|
Rp10.182
|
|
|
View
|
|
|
Rp8.531
|
|
|
Rp9.301
|
|
|
Rp8.568
|
|
|
Rp8.531
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers 100V 10A, TO-277GE, Ultra low IR SBD
- RB088RSM10STFTL1
- ROHM Semiconductor
-
1:
Rp34.307
-
7.480In Stock
|
Mouser Part No
755-RB088RSM10STFTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers 100V 10A, TO-277GE, Ultra low IR SBD
|
|
7.480In Stock
|
|
|
Rp34.307
|
|
|
Rp24.400
|
|
|
Rp17.355
|
|
|
Rp13.833
|
|
|
View
|
|
|
Rp12.384
|
|
|
Rp13.007
|
|
|
Rp12.567
|
|
|
Rp12.384
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers 150V 10A, TO-277GE, Ultra low IR SBD
- RB088RSM15STFTL1
- ROHM Semiconductor
-
1:
Rp39.811
-
2.957In Stock
|
Mouser Part No
755-RB088RSM15STFTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers 150V 10A, TO-277GE, Ultra low IR SBD
|
|
2.957In Stock
|
|
|
Rp39.811
|
|
|
Rp25.868
|
|
|
Rp19.080
|
|
|
Rp15.227
|
|
|
View
|
|
|
Rp13.906
|
|
|
Rp14.016
|
|
|
Rp13.906
|
|
|
Rp13.906
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Low VF, 30V, 500mA, DFN1006-2W, Schottky Barrier Diode for Automotive: RB550ASA-30FH is low VF and high reliability Schottky Barrier Diode, suitable for general rectification. It is a highly reliable product for automotive.
- RB550ASA-30FHT2RB
- ROHM Semiconductor
-
1:
Rp7.522
-
14.433In Stock
|
Mouser Part No
755-RB550ASA30FHT2RB
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Low V<sub>F</sub>, 30V, 500mA, DFN1006-2W, Schottky Barrier Diode for Automotive: RB550ASA-30FH is low VF and high reliability Schottky Barrier Diode, suitable for general rectification. It is a highly reliable product for automotive.
|
|
14.433In Stock
|
|
|
Rp7.522
|
|
|
Rp6.091
|
|
|
Rp3.981
|
|
|
Rp3.009
|
|
|
View
|
|
|
Rp1.945
|
|
|
Rp2.422
|
|
|
Rp2.403
|
|
|
Rp1.963
|
|
|
Rp1.945
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Schottky Barrier Diode Low VF, 60V, 3A, SMBP
- RBR3LB60BTBR1
- ROHM Semiconductor
-
1:
Rp20.914
-
5.880In Stock
|
Mouser Part No
755-RBR3LB60BTBR1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Schottky Barrier Diode Low VF, 60V, 3A, SMBP
|
|
5.880In Stock
|
|
|
Rp20.914
|
|
|
Rp13.117
|
|
|
Rp8.623
|
|
|
Rp6.678
|
|
|
Rp5.596
|
|
|
View
|
|
|
Rp6.054
|
|
|
Rp5.063
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SiC Schottky Diodes SiC Schottky Barrier Diode, 1200V, 30A, 2nd Gen
- SCS230KE2HRC11
- ROHM Semiconductor
-
1:
Rp272.438
-
782In Stock
|
Mouser Part No
755-SCS230KE2HRC11
|
ROHM Semiconductor
|
SiC Schottky Diodes SiC Schottky Barrier Diode, 1200V, 30A, 2nd Gen
|
|
782In Stock
|
|
|
Rp272.438
|
|
|
Rp246.570
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
Rp33.757
-
7.353In Stock
|
Mouser Part No
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
|
|
7.353In Stock
|
|
|
Rp33.757
|
|
|
Rp23.666
|
|
|
Rp16.585
|
|
|
Rp13.172
|
|
|
View
|
|
|
Rp11.705
|
|
|
Rp12.292
|
|
|
Rp11.870
|
|
|
Rp11.705
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
- YQ10RSM10SDTL1
- ROHM Semiconductor
-
1:
Rp27.336
-
7.594In Stock
|
Mouser Part No
755-YQ10RSM10SDTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
|
|
7.594In Stock
|
|
|
Rp27.336
|
|
|
Rp18.529
|
|
|
Rp14.383
|
|
|
Rp11.796
|
|
|
View
|
|
|
Rp9.760
|
|
|
Rp10.457
|
|
|
Rp10.145
|
|
|
Rp9.760
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD
- YQ12RSM10SDTFTL1
- ROHM Semiconductor
-
1:
Rp38.710
-
3.980In Stock
|
Mouser Part No
755-YQ12RSM10SDTFTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD
|
|
3.980In Stock
|
|
|
Rp38.710
|
|
|
Rp23.116
|
|
|
Rp18.089
|
|
|
Rp14.438
|
|
|
View
|
|
|
Rp13.026
|
|
|
Rp13.704
|
|
|
Rp13.227
|
|
|
Rp13.026
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD
- YQ12RSM10SDTL1
- ROHM Semiconductor
-
1:
Rp31.372
-
3.668In Stock
|
Mouser Part No
755-YQ12RSM10SDTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD
|
|
3.668In Stock
|
|
|
Rp31.372
|
|
|
Rp22.199
|
|
|
Rp15.649
|
|
|
Rp12.402
|
|
|
View
|
|
|
Rp10.861
|
|
|
Rp11.411
|
|
|
Rp11.026
|
|
|
Rp10.861
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD
- YQ15RSM10SDTFTL1
- ROHM Semiconductor
-
1:
Rp37.793
-
5.672In Stock
|
Mouser Part No
755-YQ15RSM10SDTFTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD
|
|
5.672In Stock
|
|
|
Rp37.793
|
|
|
Rp23.850
|
|
|
Rp16.365
|
|
|
Rp14.879
|
|
|
View
|
|
|
Rp13.576
|
|
|
Rp14.145
|
|
|
Rp13.594
|
|
|
Rp13.576
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD
- YQ15RSM10SDTL1
- ROHM Semiconductor
-
1:
Rp34.307
-
4.095In Stock
|
Mouser Part No
755-YQ15RSM10SDTL1
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD
|
|
4.095In Stock
|
|
|
Rp34.307
|
|
|
Rp20.731
|
|
|
Rp14.126
|
|
|
Rp12.824
|
|
|
View
|
|
|
Rp11.301
|
|
|
Rp11.888
|
|
|
Rp11.466
|
|
|
Rp11.301
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20BGE10SDTL
- ROHM Semiconductor
-
1:
Rp30.638
-
4.820In Stock
|
Mouser Part No
755-YQ20BGE10SDTL
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
4.820In Stock
|
|
|
Rp30.638
|
|
|
Rp21.832
|
|
|
Rp15.374
|
|
|
Rp12.182
|
|
|
Rp11.173
|
|
|
Rp10.622
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10CDFHTL
- ROHM Semiconductor
-
1:
Rp47.883
-
1.900In Stock
|
Mouser Part No
755-YQ20NL10CDFHTL
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1.900In Stock
|
|
|
Rp47.883
|
|
|
Rp33.023
|
|
|
Rp23.299
|
|
|
Rp22.566
|
|
|
Rp21.098
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20NL10CDTL
- ROHM Semiconductor
-
1:
Rp46.966
-
1.970In Stock
|
Mouser Part No
755-YQ20NL10CDTL
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
1.970In Stock
|
|
|
Rp46.966
|
|
|
Rp28.803
|
|
|
Rp22.015
|
|
|
Rp18.713
|
|
|
Rp18.273
|
|
|
Rp17.465
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10SEFHTL
- ROHM Semiconductor
-
1:
Rp52.286
-
2.000In Stock
|
Mouser Part No
755-YQ20NL10SEFHTL
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
2.000In Stock
|
|
|
Rp52.286
|
|
|
Rp33.757
|
|
|
Rp24.217
|
|
|
Rp20.181
|
|
|
Rp17.465
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20NL10SETL
- ROHM Semiconductor
-
1:
Rp43.847
-
1.988In Stock
|
Mouser Part No
755-YQ20NL10SETL
|
ROHM Semiconductor
|
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
1.988In Stock
|
|
|
Rp43.847
|
|
|
Rp25.134
|
|
|
Rp17.300
|
|
|
Rp15.741
|
|
|
Rp14.548
|
|
Min.: 1
Mult.: 1
|
|
|