PowerGaN E-Mode G-HEMT™ Transistors

STMicroelectronics PowerGaN E-Mode G-HEMT™ Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Technology
STMicroelectronics GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
Datasheet
374In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TO-LL-11 700 V 26 A 70 mOhms - 6 V, + 7 V 2.5 V 8.5 nC - 55 C + 150 C 231 W Enhancement GaN
STMicroelectronics GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
Datasheet
712In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3.000

SMD/SMT PowerFLAT-8 700 V 29 A 80 mOhms - 6 V, + 7 V 2.5 V 6.2 nC - 55 C + 150 C 188 W Enhancement GaN
STMicroelectronics GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
Datasheet
768In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3.000

SMD/SMT PowerFLAT-8 700 V 21.7 A 105 mOhms - 6 V, + 7 V 2.5 V 4.8 nC - 55 C + 150 C 158 W Enhancement GaN
STMicroelectronics GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
Datasheet
728In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3.000

SMD/SMT PowerFLAT-8 700 V 17 A 140 mOhms - 6 V, + 7 V 2.5 V 3.5 nC - 55 C + 150 C 113 W Enhancement GaN
STMicroelectronics GaN FETs 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
Datasheet
790In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3.000

SMD/SMT PowerFLAT-8 700 V 11.5 A 190 mOhms - 6 V, + 7 V 2.5 V 2.8 nC - 55 C + 150 C 83 W Enhancement GaN
STMicroelectronics GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
Datasheet
792In Stock
MouseReel Available
Min.: 1
Mult.: 1
Max.: 100
: 3.000

SMD/SMT PowerFLAT-8 700 V 10 A 240 mOhms - 6 V, + 7 V 2.5 V 2 nC - 55 C + 150 C 76 W Enhancement GaN
STMicroelectronics GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
Datasheet
552In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DPAK-3 700 V 6 A 350 mOhms - 1.4 V, + 7 V 2.5 V 1.5 nC - 55 C + 150 C 47 W Enhancement GaN
STMicroelectronics GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
Datasheet
2.500Expected 20/11/2026
MouseReel Available
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DPAK-2 N-Channel 1 Channel 700 V 10 A 240 mOhms - 6 V, + 7 V 2.5 V 2 nC - 55 C + 150 C 77 W Enhancement GaN
STMicroelectronics GaN FETs 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

SMD/SMT PowerFLAT-4 N-Channel 1 Channel 650 V 25 A 65 mOhms + 6 V 1.8 V 5.4 nC - 55 C + 150 C 305 W GaN-on-Si