ULN62003AS16-13

Diodes Incorporated
621-ULN62003AS16-13
ULN62003AS16-13

Mfr.:

Description:
Gate Drivers Std Lin Interface SO-16 T&R 4K

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 2.396

Stock:
2.396 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp19.263 Rp19.263
Rp12.072 Rp120.720
Rp11.833 Rp295.825
Rp7.907 Rp790.700
Rp7.742 Rp1.935.500
Rp6.109 Rp3.054.500
Rp5.522 Rp5.522.000
Full Reel (Order in multiples of 4000)
Rp4.623 Rp18.492.000
Rp4.531 Rp36.248.000

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: Gate Drivers
RoHS:  
Driver ICs - Various
SMD/SMT
SO-16
7 Driver
7 Output
500 mA
2.5 V
25 V
- 40 C
+ 125 C
Reel
Cut Tape
Brand: Diodes Incorporated
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Moisture Sensitive: Yes
Operating Supply Current: 1 uA
Output Voltage: 50 V
Product Type: Gate Drivers
Factory Pack Quantity: 4000
Subcategory: PMIC - Power Management ICs
Technology: Si
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

USHTS:
8542390090
ECCN:
EAR99

ULN62003A DMOS Arrays

Diodes Incorporated ULN62003A DMOS Arrays are high-voltage, high-current transistor arrays, including seven open-drain devices, with all the sources connected to a common ground. The 500mA transistors provide a clamp diode, each enabling protection for driving inductive loads. The DMOS output construction features a lower on-resistance than the common bipolar devices reducing power dissipation. This also allows the designer more flexibility to control additional devices and maintain the desired die temperature.