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PSMB033N10NS2_R2_00201

Name: Panjit PSMB033N10NS2_R2_00201
Brand: Panjit
SKU: 241-PSMB033N10NS2R22
Price: 87694 IDR
Availability: InStock

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See Product Specifications

Mouser No:

241-PSMB033N10NS2R22

Mfr. No:

PSMB033N10NS2_R2_00201

Mfr.:

Panjit

Description:

MOSFETs 100V/ 3.3mohms / TO-263AB for Industrail market

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

PSMB033N10NS2_R2_00201 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Panjit PSMB033N10NS2_R2_00201

In Stock: 2.238

Stock:: 2.238 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp87.694	Rp87.694
	Rp57.973	Rp579.730
	Rp45.315	Rp4.531.500
	Rp40.361	Rp20.180.500
Full Reel (Order in multiples of 800)
	Rp34.307	Rp27.445.600
	Rp32.289	Rp77.493.600

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-263AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	219 A
Rds On - Drain-Source Resistance:	3.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	333 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Panjit
Configuration:	Single
Fall Time:	4.9 ns
Product Type:	MOSFETs
Rise Time:	4.9 ns
Series:	PSM
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24.7 ns
Typical Turn-On Delay Time:	15.5 ns
Unit Weight:	1,400 g

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Datasheet

PSMB033N10NS2_R2_00201 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

PSMB033N10NS2 100V N-Channel MOSFET

PANJIT PSMB033N10NS2 100V N-Channel MOSFET features a high switching speed and low reverse transfer capacitance. The PANJIT PSMB033N10NS2 is housed in a TO-263AB-L package. The device is ideal for battery management systems in industrial applications and is compliant with IEC 61249 and EU RoHS 2.0 standards, using a Green molding compound.

80V & 100V Shield Gate Trench N-Channel MOSFETs

PANJIT 80V and 100V Shield Gate Trench (SGT) N-Channel MOSFETs feature a low R_DS(ON) and a high switching speed. These devices offer low reverse transfer capacitance and utilize green molding compounds, as specified in the IEC 61249 standard. These PANJIT MV enhancement mode MOSFETs are lead-free and compliant with EU RoHS 2.0, and are 100% UIS/Rg tested. These devices are available in various low-profile packages that save space, including DFN3333S-8L, DFN5060-8L, DFN5060S-8L, TO-220AB-L, TO-252AA, TO-263, and TOLL. Typical applications include PD chargers, adapters, lighting, home appliances, and DC-DC converters.