RGT20NL65GTL

ROHM Semiconductor
755-RGT20NL65GTL
RGT20NL65GTL

Mfr.:

Description:
IGBTs 5s Short-Circuit Tolerance, 650V 10A, LPDL, Field Stop Trench IGBT

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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In Stock: 1.000

Stock:
1.000 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1000 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp55.038 Rp55.038
Rp35.775 Rp357.750
Rp24.767 Rp2.476.700
Rp20.548 Rp10.274.000
Full Reel (Order in multiples of 1000)
Rp18.346 Rp18.346.000
2.000 Quote

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-263-3
SMD/SMT
Single
650 V
2.1 V
30 V
20 A
53 W
- 40 C
+ 175 C
Reel
Cut Tape
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Part # Aliases: RGT20NL65
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Attributes selected: 0

Datasheet

Specification Sheets

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USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

RGT20NL65 Field Stop Trench IGBT

ROHM Semiconductor RGT20NL65 Field Stop Trench IGBT features low collector-emitter saturation voltage, ideal for general inverter, UPS, power conditioner, and welding applications. The ROHM RGT20NL65 Field Stop Trench IGBT offers a short circuit withstand time of 5μs. Additionally, the device is specified to ±30V gate - emitter voltage and a 20A @ 25°C collector current.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

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