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NTMFS3D2N10MDT1G

Name: onsemi NTMFS3D2N10MDT1G
Brand: onsemi
SKU: 863-NTMFS3D2N10MDT1G
Price: 85676 IDR
Availability: InStock

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Mouser No:

863-NTMFS3D2N10MDT1G

Mfr. No:

NTMFS3D2N10MDT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LOW Q3.2MOHM N-FET HE SO8FL

Datasheet:

NTMFS3D2N10MDT1G Datasheet

ECAD Model:

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Learn more about onsemi NTMFS3D2N10MDT1G

In Stock: 1.717

Stock:: 1.717 Can Dispatch Immediately

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Factory Lead Time:: 48 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp85.676	Rp85.676
	Rp56.506	Rp565.060
	Rp39.994	Rp3.999.400
	Rp34.307	Rp17.153.500
	Rp33.573	Rp33.573.000
Full Reel (Order in multiples of 1500)
	Rp33.573	Rp50.359.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	142 A
Rds On - Drain-Source Resistance:	3.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	48 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	155 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTMFS3D2N10MD
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NTMFS3D2N10MDT1G Datasheet

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

NTMFS3D2N10MD N-Channel MOSFET

onsemi NTMFS3D2N10MD N-Channel MOSFET is designed using an advanced PowerTrench^® process that incorporates Shielded Gate technology. This process has been optimized to minimize the on-state resistance R_DS(on) to minimize conduction losses and yet maintain superior switching performance. The NTMFS3D2N10MD MOSFET features low Q_G and capacitance to minimize driver losses, low Q_RR, soft recovery body diode, and low Q_OSS to improve light-load efficiency. Typical applications include primary switches in isolated DC-DC converters, AC-DC adapters, synchronous rectification in DC-DC and AC-DC, BLDC motors, load switches, and solar inverters.

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.