It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

STP80N600K6

Name: STMicroelectronics STP80N600K6
Brand: STMicroelectronics
SKU: 511-STP80N600K6
Price: 57973 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STP80N600K6

Mfr. No:

STP80N600K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET

Complete Your Design

Datasheet:

STP80N600K6 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STP80N600K6

In Stock: 888

Stock:: 888 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp57.973	Rp57.973
	Rp29.354	Rp293.540
	Rp27.152	Rp2.715.200
	Rp22.749	Rp11.374.500
	Rp18.346	Rp18.346.000
	Rp18.236	Rp91.180.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	600 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	10.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	86 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Fall Time:	12.6 ns
Product Type:	MOSFETs
Rise Time:	4.1 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28.2 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STP80N600K6 Datasheet (PDF)

PCN

SPICE Models

STP80N600K6 (Zip)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STP80N600K6 MDmesh K6 Power MOSFET

STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET offers a very high voltage, N-channel power solution utilizing the ultimate MDmesh K6 technology. This K6 technology is based on 20 years of STMicroelectronics experience in super junction technology. The result of this technology allows the STMicro STP80N600K6 to feature best-in-class on-resistance per area and gate charge for applications demanding superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.