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TK110N65Z,S1F

Name: Toshiba TK110N65Z,S1F
Brand: Toshiba
SKU: 757-TK110N65ZS1F
Price: 137778 IDR
Availability: InStock

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Mouser No:

757-TK110N65ZS1F

Mfr. No:

TK110N65Z,S1F

Mfr.:

Toshiba

Description:

MOSFETs MOSFET 650V 110mOhms DTMOS-VI

Datasheet:

TK110N65Z,S1F Datasheet (PDF)

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Learn more about Toshiba TK110N65Z,S1F

In Stock: 432

Stock:: 432 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp137.778	Rp137.778
	Rp79.989	Rp799.890
	Rp79.805	Rp9.576.600
	Rp60.175	Rp30.689.250

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	35 ns
Series:	DTMOS VI
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	90 ns
Typical Turn-On Delay Time:	62 ns
Unit Weight:	6 g

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Datasheet

TK110N65Z,S1F Datasheet (PDF)

Application Notes

Models

Product Catalogs

Selection Guide 2024 - MOSFETs

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

TK110N65Z DTMOSVI Power MOSFET

Toshiba TK110N65Z DTMOSVI Power MOSFET features a low drain-source on-resistance of R_DS(ON) = 0.092Ω (typ.). The MOSFET has high-speed switching properties, lower capacitance, and an enhancement mode of Vth = 3V to 4V (V_DS = 10V, I_D = 1.02mA). The Toshiba TK110N65Z is ideal for switching power supply applications.

DTMOSVI MOSFETs

Toshiba DTMOSVI MOSFETs offer a low drain-source on-resistance of 0.033Ω (typical), a drain-source voltage of 650V, and a drain current of 57A. The DTMOSVI MOSFETs offer high-speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.