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NVBG025N065SC1

Name: onsemi NVBG025N065SC1
Brand: onsemi
SKU: 863-NVBG025N065SC1
Price: 477913 IDR
Availability: InStock

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Mouser No:

863-NVBG025N065SC1

Mfr. No:

NVBG025N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS D2PAK-7L 650V

Datasheet:

NVBG025N065SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVBG025N065SC1

In Stock: 68

Stock:: 68 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 68 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp477.913	Rp477.913
	Rp375.726	Rp3.757.260
	Rp375.176	Rp37.517.600
	Rp369.855	Rp184.927.500
Full Reel (Order in multiples of 800)
	Rp357.564	Rp286.051.200

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	106 A
Rds On - Drain-Source Resistance:	28.5 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	164 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	395 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	27 S
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	19 ns
Series:	NVBG025N065SC1
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns

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Datasheet

NVBG025N065SC1 Datasheet

Material Composition Disclosure

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NVBG025N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVBG025N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVBG025N065SC1 features low ON resistance and a compact chip size that ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).