|
|
SiC MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
Rp432.599
-
735In Stock
-
NRND
|
Mouser Part No
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFETs SIC_DISCRETE
|
|
735In Stock
|
|
|
Rp432.599
|
|
|
Rp348.024
|
|
|
Rp304.911
|
|
|
Rp299.590
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
Rp129.339
-
370In Stock
|
Mouser Part No
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
370In Stock
|
|
|
Rp129.339
|
|
|
Rp87.877
|
|
|
Rp72.650
|
|
|
Rp69.531
|
|
|
Rp67.330
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
Rp290.601
-
1.234In Stock
-
NRND
|
Mouser Part No
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
1.234In Stock
|
|
|
Rp290.601
|
|
|
Rp203.641
|
|
|
Rp173.553
|
|
|
Rp157.592
|
|
|
View
|
|
|
Rp149.887
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
Rp235.746
-
29In Stock
-
240On Order
-
NRND
|
Mouser Part No
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
29In Stock
240On Order
|
|
|
Rp235.746
|
|
|
Rp139.797
|
|
|
Rp118.882
|
|
|
Rp103.471
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
Rp110.810
-
10.930Expected 09/07/2026
|
Mouser Part No
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
10.930Expected 09/07/2026
|
|
|
Rp110.810
|
|
|
Rp72.650
|
|
|
Rp53.387
|
|
|
Rp47.516
|
|
|
Rp42.196
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
Rp337.933
-
2.160On Order
|
Mouser Part No
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2.160On Order
On Order:
720 Expected 06/08/2026
960 Expected 07/05/2027
Factory Lead Time:
45 Weeks
|
|
|
Rp337.933
|
|
|
Rp223.454
|
|
|
Rp193.000
|
|
|
Rp187.680
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
Rp169.701
-
Non-Stocked Lead-Time 52 Weeks
-
NRND
|
Mouser Part No
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
Non-Stocked Lead-Time 52 Weeks
|
|
|
Rp169.701
|
|
|
Rp111.727
|
|
|
Rp86.593
|
|
|
Rp82.924
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Indonesia