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SiC MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
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1:
Rp409.483
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724In Stock
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NRND
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Mouser Part No
726-AIMW120R045M1XKS
NRND
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Infineon Technologies
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SiC MOSFETs SIC_DISCRETE
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724In Stock
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
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1:
Rp204.008
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323In Stock
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NRND
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Mouser Part No
726-IMZA65R048M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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323In Stock
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Rp204.008
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Rp144.200
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Rp120.166
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Rp106.957
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Rp90.813
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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1 Channel
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650 V
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39 A
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64 mOhms
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- 5 V, + 23 V
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5.7 V
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33 nC
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- 55 C
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+ 150 C
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125 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
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1:
Rp97.968
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4.674In Stock
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2.000Expected 07/10/2026
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Mouser Part No
726-IMBF170R1K0M1XTM
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Infineon Technologies
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SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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4.674In Stock
2.000Expected 07/10/2026
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Rp97.968
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Rp51.002
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Rp46.415
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Rp41.095
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Rp38.710
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Min.: 1
Mult.: 1
:
1.000
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SMD/SMT
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TO-263-7
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1 Channel
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1.7 kV
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5.2 A
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1 Ohms
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- 10 V, + 20 V
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4.5 V
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5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
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1:
Rp134.843
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80In Stock
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240On Order
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NRND
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Mouser Part No
726-IMW120R140M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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80In Stock
240On Order
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Rp134.843
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Rp78.337
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Rp71.916
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Rp67.330
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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1 Channel
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1.2 kV
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19 A
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182 mOhms
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- 7 V, + 23 V
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3.5 V
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13 nC
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- 55 C
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+ 175 C
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94 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
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1:
Rp267.852
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71In Stock
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1.680Expected 01/09/2026
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NRND
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Mouser Part No
726-IMW65R027M1HXKSA
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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71In Stock
1.680Expected 01/09/2026
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Rp267.852
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Rp161.261
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Rp157.225
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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1 Channel
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650 V
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47 A
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34 mOhms
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- 5 V, + 23 V
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5.7 V
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62 nC
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- 55 C
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+ 150 C
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189 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
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1:
Rp332.063
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2.160On Order
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NRND
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Mouser Part No
726-IMZ120R030M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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2.160On Order
Factory Lead Time:
52 Weeks
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Rp332.063
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Rp252.991
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Rp210.796
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Rp187.680
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Rp177.773
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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1 Channel
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1.2 kV
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56 A
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40 mOhms
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- 7 V, + 23 V
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5.7 V
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63 nC
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- 55 C
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+ 150 C
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227 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
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1:
Rp174.104
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Non-Stocked Lead-Time 52 Weeks
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NRND
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Mouser Part No
726-IMZA65R072M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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Non-Stocked Lead-Time 52 Weeks
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Rp174.104
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Rp122.551
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Rp86.593
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Rp78.888
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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1 Channel
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650 V
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28 A
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94 mOhms
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- 5 V, + 23 V
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5.7 V
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22 nC
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- 55 C
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+ 150 C
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96 W
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Enhancement
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CoolSiC
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Indonesia