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NVHL045N065SC1

Name: onsemi NVHL045N065SC1
Brand: onsemi
SKU: 863-NVHL045N065SC1
Price: 328210 IDR
Availability: InStock

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Mouser No:

863-NVHL045N065SC1

Mfr. No:

NVHL045N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-3L 650V

Datasheet:

NVHL045N065SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVHL045N065SC1

In Stock: 398

Stock:: 398 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp328.210	Rp328.210
	Rp231.710	Rp2.317.100
	Rp214.098	Rp25.691.760

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	66 A
Rds On - Drain-Source Resistance:	32 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	291 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	16 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	30 ns
Series:	NVHL045N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

NVHL045N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVHL045N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVHL045N065SC1 Silicon Carbide (SiC) MOSFETs feature EliteSiC technology and deliver superior switching performance. The onsemi NVHL045N065SC1 has increased reliability compared to traditional Silicon MOSFETs. The MOSFETs' low ON resistance and compact chip size result in low capacitance and gate charge, contributing to high efficiency, fast operation frequency, increased power density, reduced electromagnetic interference (EMI), and a more compact system size. These MOSFETs offer advanced technology for enhanced power electronics applications.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).