600V CoolMOS P7 Power Transistors

Infineon 600V CoolMOS P7 Power Transistors are 7th generation devices that utilise revolutionary technology for high-voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast-switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, an outstandingly robust body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
907Expected 26/05/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs CONSUMER
Datasheet
4.200Expected 06/08/2026
MouseReel Available
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 40 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
3.520On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
1.000On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 160 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 81 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
220Expected 18/02/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms - 20 V, 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs CONSUMER
Datasheet
1.000On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 40 C + 150 C 21 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
227Expected 01/06/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
240Expected 08/04/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 17 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube