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NTMC083NP10M5L

Name: onsemi NTMC083NP10M5L
Brand: onsemi
SKU: 863-NTMC083NP10M5L
Price: 16144 IDR
Availability: InStock

Mouser No:

863-NTMC083NP10M5L

Mfr. No:

NTMC083NP10M5L

Mfr.:

onsemi

Description:

MOSFETs MV5_100V_N_P_IN DUALS AND SINGLE

Datasheet:

NTMC083NP10M5L Datasheet

ECAD Model:

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Learn more about onsemi NTMC083NP10M5L

In Stock: 39.897

Stock:: 39.897 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp16.144	Rp16.144
	Rp10.365	Rp103.650
	Rp8.513	Rp851.300
	Rp8.146	Rp4.073.000
	Rp7.852	Rp7.852.000
Full Reel (Order in multiples of 2500)
	Rp7.577	Rp18.942.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	4.5 A, 3.6 A
Rds On - Drain-Source Resistance:	83 mOhms, 131 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V, 4 V
Qg - Gate Charge:	3 nC, 8.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	NTMC083NP10M5L
Factory Pack Quantity:	2500
Subcategory:	Transistors

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Datasheet

NTMC083NP10M5L Datasheet

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NTMC083NP10M5L Dual N- & P- Channel Power MOSFET

onsemi NTMC083NP10M5L Dual N- and P- Channel Power MOSFET is designed with low gate charge (Q_G) and capacitance to minimize the driver losses. This MOSFET features low drain-to-source on-resistance (R_DS(on)) to minimize conduction losses. This device is compactly designed with a standard footprint of 5mm x 6mm and is not ESD protected. The NTMC083NP10M5L power MOSFET is ideally used in power tools, battery-operated vacuums, Unmanned Aerial Vehicle (UAV)/drones, material handling, motor drive, and home automation.