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XPN12006NC,L1XHQ

Name: Toshiba XPN12006NC,L1XHQ
Brand: Toshiba
SKU: 757-XPN12006NCL1XHQ
Price: 32472 IDR
Availability: InStock

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Mouser No:

757-XPN12006NCL1XHQ

Mfr. No:

XPN12006NC,L1XHQ

Mfr.:

Toshiba

Description:

MOSFETs TSON N-CH 60V 20A

Datasheet:

XPN12006NC,L1XHQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba XPN12006NC,L1XHQ

In Stock: 56.524

Stock:: 56.524 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp32.472	Rp32.472
	Rp19.997	Rp199.970
	Rp13.484	Rp1.348.400
	Rp10.769	Rp5.384.500
	Rp9.980	Rp9.980.000
	Rp9.815	Rp24.537.500
Full Reel (Order in multiples of 5000)
	Rp8.568	Rp42.840.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	23.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	65 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	5 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	33 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	20 mg

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Datasheet

XPN12006NC,L1XHQ Datasheet (PDF)

Application Notes

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Reliability Tests Report

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

XPN12006NC Automotive U-MOSVIII-H MOSFETs

Toshiba XPN12006NC Automotive U-MOSVIII-H MOSFETs are AEC-Q101 qualified in a compact, thin TSON package. The XPN12006NC features low drain-source on-resistance, low leakage current, and an enhancement mode.

Automotive U-MOSVIII-H Power MOSFETs

Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. These devices feature low on-resistance with proprietary technology using a Cu connector. The Toshiba U-MOSVIII-H Power MOSFETs have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance.

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

Automotive AEC-Q101 Qualified Power MOSFETs

Toshiba Automotive AEC-Q101 Qualified Power MOSFETs is an extensive lineup of Power MOSFETs covering various automotive applications in 12V to 48V battery systems. Toshiba has been in the discrete automotive industry since the 1960s, starting with rectifiers and then Automotive MOSFETs in the 1990s. With performance and reliability, all of Toshiba’s automotive products go above and beyond AEC-Q101 standards.