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STD12N60DM2AG

Name: STMicroelectronics STD12N60DM2AG
Brand: STMicroelectronics
SKU: 511-STD12N60DM2AG
Price: 58524 IDR
Availability: OutOfStock

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Mouser No:

511-STD12N60DM2AG

Mfr. No:

STD12N60DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in

Complete Your Design

Datasheet:

STD12N60DM2AG Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp58.524	Rp58.524
	Rp37.976	Rp379.760
	Rp27.886	Rp2.788.600
	Rp23.483	Rp11.741.500
	Rp22.749	Rp22.749.000
Full Reel (Order in multiples of 2500)
	Rp19.080	Rp47.700.000
	Rp17.667	Rp88.335.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	440 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	14.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	9.5 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	STD12N60DM2AG
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	330 mg

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Datasheet

STD12N60DM2AG Datasheet (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

STD12N60DM2AG N-channel Power MOSFET

STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is a part of the MDmesh™ DM2 fast-recovery diodes. This automotive-grade N-channel power MOSFET offers very low recovery charge (Q_rr) and recovery time (t_rr) combined with low R_DS(on). This power MOSFET features low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is suitable for demanding high-efficiency converters and for bridge topologies and ZVS phase-shift converters.