GaNEXUS™ GaN FETs

onsemi GaNEXUS™ Gallium Nitride Field-Effect Transistors (GaN FETs) use wide-bandgap material properties of GaN to deliver fast switching, low gate and output charge, and enhanced efficiency compared to silicon power transistors. These features enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high voltages. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. Ideal applications for the onsemi GaNEXUS family include industrial automation, robotics, AI data centers, automotive electrification, and energy infrastructure.

Results: 21
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Maximum Operating Frequency Technology
onsemi GaN FETs 700V 75MR TYP 100MR MAX LGAN IN TO252/DPAK 2.440In Stock
Cut Tape
Rp59.807,96
Rp38.893,52
Reel
Rp38.893,52
Min.: 1
Mult.: 1
Max.: 25
: 2.500
SMD/SMT DPAK-3 N-Channel 1 Channel 700 V 21 A 100 mOhms - 6 V, + 7 V 2.5 V 3.8 nC - 55 C + 150 C 105 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 132MR TYP 170MR MAX LGAN IN TO252/DPAK 2.488In Stock
Cut Tape
Rp44.397,32
Rp28.436,30
Reel
Rp28.436,30
Min.: 1
Mult.: 1
Max.: 25
: 2.500
SMD/SMT PDSO-E3 N-Channel 1 Channel 700 V 12 A 170 mOhms - 6 V, + 7 V 2.5 V 2.1 nC - 55 C + 150 C 64 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 75MR TYP 100MR MAX LGAN IN DFN 8X8 2.443In Stock
Cut Tape
Rp64.761,38
Rp42.195,80
Reel
Rp42.195,80
Min.: 1
Mult.: 1
Max.: 25
: 2.500
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 21 A 100 mOhms - 6 V, + 7 V 2.5 V 3.8 nC - 55 C + 150 C 111 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 101MR TYP 130MR MAX LGAN IN DFN 8X8 2.472In Stock
Cut Tape
Rp59.074,12
Rp38.343,14
Reel
Rp38.343,14
Min.: 1
Mult.: 1
Max.: 25
: 2.500
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 16 A 130 mOhms - 6 V, + 7 V 2.5 V 2.65 nC - 55 C + 150 C 84 W Enhancement GaNEXUS GaN
onsemi GaN FETs 700V 132MR TYP 170MR MAX LGAN IN DFN 8X8 2.500In Stock
Cut Tape
Rp52.102,64
Rp33.573,18
Reel
Rp33.573,18
Min.: 1
Mult.: 1
Max.: 25
: 2.500
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 12 A 170 mOhms - 6 V, + 7 V 2.5 V 2.1 nC - 55 C + 150 C 69 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V 35MR LGAN TOLL
2.400Expected 03/11/2026
Cut Tape
Rp278.125,36
Rp164.013,24
Reel
Rp164.013,24
Min.: 1
Mult.: 1
Max.: 120
: 1.200
SMD/SMT PDSO-F9 HEMT 1 Channel 650 V 64 A 27 mOhms - 6 V, + 7 V 1.5 V 21 nC - 55 C + 150 C 367 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V 35MR LGAN TOLT
2.400Expected 09/11/2026
Cut Tape
Rp278.125,36
Rp164.013,24
Reel
Rp164.013,24
Min.: 1
Mult.: 1
Max.: 120
: 1.200
SMD/SMT PDSO-G16 HEMT 1 Channel 650 V 64 A 27 mOhms - 6 V, + 7 V 1.5 V 16 nC - 55 C + 150 C 462 W Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS SMART, 650V, 19m, TOLL
1.200On Order
Cut Tape
Rp367.286,92
Rp274.272,70
Rp237.213,78
Rp224.555,04
Rp209.694,78
Reel
Rp209.694,78
Min.: 1
Mult.: 1
: 2.400
SMD/SMT PDSO-F9 N-Channel 1 Channel 650 V 75 A 25 mOhms 10 V to 24 V + 150 C Enhancement GaNEXUS 2 MHz GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS SMART, 650V, 19m, TOLT
1.200On Order
Cut Tape
Rp367.286,92
Rp274.272,70
Rp237.213,78
Rp224.555,04
Rp209.694,78
Reel
Rp209.694,78
Min.: 1
Mult.: 1
: 2.400
SMD/SMT PDSO-G16 N-Channel 1 Channel 650 V 75 A 25 mOhms 10 V to 24 V + 150 C Enhancement GaNEXUS 2 MHz GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 40V, 0.5m, 5x6 Dual Cool
1.250On Order
Cut Tape
Rp146.401,08
Rp103.104,52
Rp83.474,30
Rp74.117,84
Rp65.678,68
Reel
Rp65.678,68
Min.: 1
Mult.: 1
: 2.500
SMD/SMT PDSO-N8 N-Channel 1 Channel 40 V 819 A 0.7 mOhms - 4 V to 6 V 1.2 V 52 nC - 40 C + 150 C 962 W Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 100V, 0.8m, 5x6 Dual Cool
1.250On Order
Cut Tape
Rp167.865,90
Rp114.662,50
Rp94.665,36
Rp84.208,14
Rp78.704,34
Reel
Rp78.704,34
Min.: 1
Mult.: 1
: 2.500
SMD/SMT PDSO-N8 N-Channel 1 Channel 100 V 1 mOhms - 4 V to 6 V 1.1 V 39 nC - 55 C + 150 C Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 100V, 1.1m, 5x6 Dual Cool
1.250On Order
Cut Tape
Rp146.401,08
Rp103.104,52
Rp83.474,30
Rp74.117,84
Rp65.678,68
Reel
Rp65.678,68
Min.: 1
Mult.: 1
: 2.500
SMD/SMT PDSO-N8 N-Channel 1 Channel 100 V 474 A 1.5 mOhms - 4 V to 6 V 1.1 V 19 nC - 55 C + 150 C 658 W Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 150V, 1.6m, 5x6 Dual Cool
1.250On Order
Cut Tape
Rp187.312,66
Rp132.458,12
Rp110.259,46
Rp98.334,56
Rp91.730,00
Reel
Rp91.730,00
Min.: 1
Mult.: 1
: 2.500
SMD/SMT PDSO-N8 N-Channel 1 Channel 150 V 2.2 mOhms - 4 V to 6 V 1.1 V 34 nC - 55 C + 150 C Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 100V, 1.9m, 5x6 Dual Cool
1.250On Order
Cut Tape
Rp124.018,96
Rp83.107,38
Rp66.779,44
Rp59.441,04
Rp52.469,56
Reel
Rp52.469,56
Min.: 1
Mult.: 1
: 2.500
SMD/SMT PDSO-N8 N-Channel 1 Channel 100 V 275 A 2.5 mOhms - 4 V to 6 V 1.2 V 11 nC - 55 C + 150 C 378 W Enhancement GaNEXUS GaN
onsemi GaN FETs ENGINEERING SAMPLE - GaNEXUS FET, 200V, 2.6m, 5x6 Dual Cool
1.250On Order
Cut Tape
Rp187.312,66
Rp132.458,12
Rp110.259,46
Rp98.334,56
Rp91.730,00
Reel
Rp91.730,00
Min.: 1
Mult.: 1
: 2.500
SMD/SMT PDSO-N8 N-Channel 1 Channel 200 V 3.6 mOhms - 4 V to 6 V 1.1 V 30 nC - 55 C + 150 C Enhancement GaNEXUS GaN
onsemi GaN FETs GaNEXUS SMART, 650V, 42m, TOLL
1.200Expected 04/12/2026
Cut Tape
Rp216.666,26
Rp156.674,84
Rp130.623,52
Rp116.313,64
Reel
Rp98.701,48
Min.: 1
Mult.: 1
: 1.200
SMD/SMT PDSO-F9 N-Channel 1 Channel 650 V 54 A 55 mOhms 22 V + 150 C 271 W Enhancement GaNEXUS 2 MHz GaN
onsemi GaN FETs GaNEXUS SMART, 650V, 42m, TOLT
1.200Expected 23/03/2027
Cut Tape
Rp216.666,26
Rp156.674,84
Rp130.623,52
Rp116.313,64
Reel
Rp98.701,48
Min.: 1
Mult.: 1
: 1.200
SMD/SMT PDSO-G16 N-Channel 1 Channel 650 V 54 A 55 mOhms 22 V + 150 C 338 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V 50MR LGAN TOLL
2.400Expected 03/11/2026
Cut Tape
Rp209.144,40
Rp151.354,50
Rp126.037,02
Reel
Rp126.037,02
Min.: 1
Mult.: 1
Max.: 120
: 1.200
SMD/SMT PDSO-F9 HEMT 1 Channel 650 V 40 A 39 mOhms - 6 V, + 7 V 1.5 V 10.6 nC - 55 C + 150 C 250 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V 50MR LGAN TOLT
2.400Expected 02/11/2026
Cut Tape
Rp200.338,32
Rp130.623,52
Rp114.112,12
Reel
Rp114.112,12
Min.: 1
Mult.: 1
Max.: 120
: 1.200
SMD/SMT PDSO-G16 HEMT 1 Channel 650 V 40 A 39 mOhms - 6 V, + 7 V 1.5 V 10.9 nC - 55 C + 150 C 312 W Enhancement GaNEXUS GaN
onsemi GaN FETs 100V 2.5MR LGAN IN 3.3X3.3 LGA DUAL COOL
2.500Expected 22/10/2026
Cut Tape
Rp113.928,66
Rp74.668,22
Rp54.854,54
Reel
Rp54.854,54
Min.: 1
Mult.: 1
Max.: 250
: 2.500
SMD/SMT PTFP-N9 N-Channel 1 Channel 100 V 183 A 2.7 mOhms - 4 V to 6 V 2.1 V 7.3 nC - 40 C + 150 C 250 W Enhancement GaNEXUS GaN
onsemi GaN FETs 100V 5MR LGAN IN 3.3X3.3 LGA DUAL COOL
2.500Expected 30/10/2026
Cut Tape
Rp84.941,98
Rp55.588,38
Rp41.461,96
Reel
Rp41.461,96
Min.: 1
Mult.: 1
Max.: 250
: 2.500
SMD/SMT PTFP-N9 N-Channel 1 Channel 100 V 146 A 3.8 mOhms - 4 V to 6 V 5.2 nC - 40 C + 150 C 208 W Enhancement GaNEXUS GaN