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STGHU30M65DF2AG

Name: STMicroelectronics STGHU30M65DF2AG
Brand: STMicroelectronics
SKU: 511-STGHU30M65DF2AG
Price: 86410 IDR
Availability: InStock

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See Product Specifications

Mouser No:

511-STGHU30M65DF2AG

Mfr. No:

STGHU30M65DF2AG

Mfr.:

STMicroelectronics

Description:

IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STGHU30M65DF2AG Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	HU3PAK-7
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	87 A
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	57 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBTs
Factory Pack Quantity:	600
Subcategory:	Transistors
Unit Weight:	2,320 g

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Datasheet

STGHU30M65DF2AG Datasheet (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Morocco
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.