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EPC2305

Name: EPC EPC2305
Brand: EPC
SKU: 65-EPC2305
Price: 161628 IDR
Availability: OutOfStock

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See Product Specifications

Mouser No:

65-EPC2305

Mfr. No:

EPC2305

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm

Lifecycle:

New At Mouser

Datasheet:

EPC2305 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about EPC EPC2305

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 15.000

Expected 31/07/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp161.628	Rp161.628
	Rp110.259	Rp1.102.590
	Rp81.089	Rp8.108.900
	Rp80.172	Rp40.086.000
	Rp70.082	Rp70.082.000
Full Reel (Order in multiples of 3000)
	Rp65.312	Rp195.936.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	EPC
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	133 A
Rds On - Drain-Source Resistance:	2.2 mOhms
Vgs - Gate-Source Voltage:	- 4 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	eGaN FET
Brand:	EPC
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	Power Transistor
Product Type:	GaN FETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Unit Weight:	31,200 mg

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Datasheet

EPC2305 Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290040
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

EPC2305 Enhancement-Mode GaN Power Transistor

Efficient Power Conversion (EPC) EPC2305 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is available in a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management. The EPC2305 features 150V drain-source breakdown voltage (continuous) V_DS and 2.2mΩ typical and 3mΩ maximum drain-source on resistance R_DS(on). This power resistor from EPC provides efficient operation in many topologies, thanks to the ultra-low capacitance and zero reverse recovery (Q_RR) of the eGaN^® FET. Typical applications for the EPC2305 include phones, notebooks, gaming PCs, power tools, home robotics, e-mobility, and solar.