It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SIZF906BDT-T1-GE3

Name: Vishay SIZF906BDT-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIZF906BDT-T1-GE3
Price: 50635 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIZF906BDT-T1-GE3

Mfr. No:

SIZF906BDT-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAIR6X5 2NCH 30V 36A

Datasheet:

SIZF906BDT-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay / Siliconix SIZF906BDT-T1-GE3

In Stock: 10.744

Stock:: 10.744 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp50.635	Rp50.635
	Rp32.839	Rp328.390
	Rp22.566	Rp2.256.600
	Rp18.328	Rp9.164.000
	Rp16.933	Rp16.933.000
Full Reel (Order in multiples of 3000)
	Rp14.952	Rp44.856.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAIR-6x5F-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	105 A, 257 A
Rds On - Drain-Source Resistance:	680 uOhms, 2.1 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	25 nC, 81 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	38 W, 83 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Dual
Fall Time:	5 ns, 10 ns
Forward Transconductance - Min:	93 S, 170 S
Product Type:	MOSFETs
Rise Time:	5 ns, 30 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Gen IV Power MOSFET
Typical Turn-Off Delay Time:	22 ns, 40 ns
Typical Turn-On Delay Time:	12 ns, 20 ns
Unit Weight:	337,318 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIZF906BDT-T1-GE3 Datasheet

Technical Resources

This functionality requires JavaScript to be enabled.

CNHTS:: 8504409100
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiZF906BDT Dual N-Channel (D-S) MOSFET

Vishay / Siliconix SiZF906BDT Dual N-Channel (D-S) MOSFET is a SkyFET^® low side MOSFET with integrated schottky. The TrenchFET^® Gen IV power MOSFET is offered in a PowerPAIR 6x5F package and is 100% Rg and UIS tested. The Vishay / Siliconix SiZF906BDT Dual MOSFET is ideal for CPU core power, computer/server peripherals, POL, synchronous buck converter, and telecom DC/DC applications.