STGWA30M65DF2AG

STMicroelectronics
511-STGWA30M65DF2AG
STGWA30M65DF2AG

Mfr.:

Description:
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
2.02 V
20 V
87 A
441 W
- 55 C
+ 175 C
AEC-Q101
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 57 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBTs
Factory Pack Quantity: 30
Subcategory: Transistors
Unit Weight: 6,100 g
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STGWA30M65DF2AG Automotive-Grade IGBT

STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT is designed using an advanced proprietary trench gate field stop structure. The STMicroelectronics STGWA30M65DF2AG offers an optimal system performance and efficiency balance for inverters, with low-loss and essential short-circuit functionality. The device is AEC-Q101 qualified and features a maximum junction temperature of +175°C, a 6μs short circuit withstand time, low VCE(sat) of 1.7V at 30A, and tight parameter distribution. The device also includes a soft, fast-recovery antiparallel diode and low thermal resistance and is available in a TO-247 long leads package.

In Stock: 540

Stock:
540
Can Dispatch Immediately
On Order:
600
Expected 11/06/2027
Factory Lead Time:
22
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp81.456 Rp81.456
Rp55.955 Rp559.550
Rp41.645 Rp4.997.400
Rp34.857 Rp17.777.070
Rp30.271 Rp30.876.420

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