CMPA5259080S

MACOM
941-CMPA5259080S
CMPA5259080S

Mfr.:

Description:
RF Amplifier MMIC, GaN HEMT, QFN, G40V4, 5.2-5.9GHz,

Datasheet:
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Learn more about MACOM CMPA5259080S
This product may require additional documentation to export from the United States.

In Stock: 25

Stock:
25 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 25 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 10)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp22.466.145 Rp22.466.145
Full Reel (Order in multiples of 10)
Rp22.466.145 Rp224.661.450
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: RF Amplifier
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
5 GHz to 5.9 GHz
21.4 dB
SMD/SMT
QFN-48
GaN
+ 225 C
Reel
Cut Tape
MouseReel
Brand: MACOM
Moisture Sensitive: Yes
Product Type: RF Amplifier
Factory Pack Quantity: 10
Subcategory: Wireless & RF Integrated Circuits
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CAHTS:
8542330000
USHTS:
8542330001
TARIC:
8542330000
MXHTS:
8542330299
ECCN:
3A001.b.2.a.4

CMPA5259080S GaN MMIC Power Amplifier

MACOM CMPA5259080S GaN MMIC Power Amplifier contains a two-stage reactively matched amplifier design approach for high power and power-added efficiency. The CMPA5259080S features 29dB small-signal gain, 110W typical PSAT, and an operation up to 40V. The CMPA5259080S gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) is available in a 7mm x 7mm surface mount (QFN package). It is ideal for civil and military pulsed radar amplifier applications.

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