UCC14130QDWNRQ1

Texas Instruments
595-UCC14130QDWNRQ1
UCC14130QDWNRQ1

Mfr.:

Description:
DC/DC Converters - SMD Automotive 1.5-W 1 2 -Vin to 15-Vin 12-

Datasheet:
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In Stock: 1.609

Stock:
1.609
Can Dispatch Immediately
On Order:
750
Expected 02/03/2026
Factory Lead Time:
18
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 750)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp165.481 Rp165.481
Rp165.114 Rp825.570
Rp133.192 Rp1.331.920
Rp124.202 Rp3.105.050
Rp124.019 Rp6.200.950
Rp113.929 Rp11.392.900
Rp108.975 Rp27.243.750
Full Reel (Order in multiples of 750)
Rp104.205 Rp78.153.750
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: DC/DC Converters - SMD
RoHS:  
Isolated
2 Output
1.5 W
12 V
10 V
18 V
100 mA
3 kVAC
SSOP-36
12.93 mm
7.6 mm
3.55 mm
UCC14130
Brand: Texas Instruments
Dimensions: 12.93 mm x 7.6 mm x 3.55 mm
Input Voltage: 10 V to 18 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: Isolated
Factory Pack Quantity: 750
Subcategory: DC-DC Converters
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Attributes selected: 0

Datasheet

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CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

UCC14130-Q1 Automotive Isolated DC/DC Module

Texas Instruments UCC14130-Q1 Automotive Isolated DC/DC Module is engineered to provide power to GaN, IGBT, SiC, or Si gate drivers. The UCC14130-Q1 integrates a transformer and DC/DC controller with a proprietary architecture to achieve high efficiency and low emissions. It can provide an isolated 12V output from a 12V regulated input for driving GaN and Si MOSFETs and an isolated 15V or 18V output from a 15V controlled input to bias the driver circuit for SiC MOSFET or IGBTs. The high accuracy provides better channel enhancement for higher system efficiency without over-stressing the power device gate.

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