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|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
Rp667.978
-
847In Stock
-
2.000On Order
|
Mouser Part No
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
847In Stock
2.000On Order
Stock:
847 Can Dispatch Immediately
On Order:
1.000 Expected 15/10/2026
1.000 Expected 18/03/2027
Factory Lead Time:
53 Weeks
|
|
|
Rp667.978
|
|
|
Rp496.810
|
|
|
Rp496.626
|
|
|
Rp470.575
|
|
|
Rp470.575
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
Rp356.279
-
3.134In Stock
|
Mouser Part No
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3.134In Stock
|
|
|
Rp356.279
|
|
|
Rp224.188
|
|
|
Rp222.537
|
|
|
Rp209.511
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
Rp487.453
-
91In Stock
-
2.000On Order
|
Mouser Part No
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
91In Stock
2.000On Order
Stock:
91 Can Dispatch Immediately
On Order:
1.000 Expected 10/09/2026
1.000 Expected 07/01/2027
Factory Lead Time:
52 Weeks
|
|
|
Rp487.453
|
|
|
Rp365.085
|
|
|
Rp335.548
|
|
|
Rp325.458
|
|
|
Rp305.094
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
Rp299.590
-
359In Stock
|
Mouser Part No
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
359In Stock
|
|
|
Rp299.590
|
|
|
Rp179.424
|
|
|
Rp179.240
|
|
|
Rp169.701
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
Rp256.844
-
1.651In Stock
|
Mouser Part No
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.651In Stock
|
|
|
Rp256.844
|
|
|
Rp146.951
|
|
|
Rp137.045
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
Rp207.126
-
210In Stock
|
Mouser Part No
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
210In Stock
|
|
|
Rp207.126
|
|
|
Rp118.332
|
|
|
Rp106.407
|
|
|
Rp100.720
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
Rp167.132
-
1.757In Stock
|
Mouser Part No
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.757In Stock
|
|
|
Rp167.132
|
|
|
Rp91.363
|
|
|
Rp84.025
|
|
|
Rp77.971
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
Rp125.303
-
532In Stock
|
Mouser Part No
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
532In Stock
|
|
|
Rp125.303
|
|
|
Rp66.596
|
|
|
Rp61.092
|
|
|
Rp57.056
|
|
|
Rp53.937
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
Rp106.957
-
1.017In Stock
-
1.000Expected 18/03/2027
|
Mouser Part No
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.017In Stock
1.000Expected 18/03/2027
|
|
|
Rp106.957
|
|
|
Rp56.139
|
|
|
Rp51.185
|
|
|
Rp46.232
|
|
|
Rp43.663
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
Rp96.683
-
5.094In Stock
|
Mouser Part No
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
5.094In Stock
|
|
|
Rp96.683
|
|
|
Rp50.268
|
|
|
Rp45.682
|
|
|
Rp40.361
|
|
|
Rp40.178
|
|
|
Rp37.976
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
Rp154.473
-
41In Stock
-
2.000On Order
|
Mouser Part No
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
41In Stock
2.000On Order
|
|
|
Rp154.473
|
|
|
Rp94.115
|
|
|
Rp79.989
|
|
|
Rp73.751
|
|
|
Rp65.862
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
Indonesia