Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1.563In Stock
1.000On Order
Cut Tape
Rp708.889,44
Rp578.449,38
Rp511.119,56
Rp508.184,20
Reel
Rp477.179,46
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1.975In Stock
Cut Tape
Rp509.651,88
Rp352.059,74
Rp351.142,44
Rp331.879,14
Reel
Rp309.680,48
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 144 A 12.2 mOhms - 7 V, + 20 V 5.1 V 124 nC - 55 C + 175 C 600 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 235In Stock
Cut Tape
Rp326.742,26
Rp248.955,22
Rp207.493,26
Rp184.927,68
Reel
Rp172.635,86
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 87 A 21.6 mOhms - 7 V, + 20 V 5.1 V 71 nC - 55 C + 175 C 385 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1.593In Stock
Cut Tape
Rp248.221,38
Rp151.537,96
Rp148.602,60
Reel
Rp141.447,66
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 75 A 25.4 mOhms - 7 V, + 20 V 5.1 V 60 nC - 55 C + 175 C 335 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 3.601In Stock
2.000On Order
Cut Tape
Rp96.683,42
Rp50.268,04
Rp45.681,54
Rp40.361,20
Reel
Rp40.177,74
Min.: 1
Mult.: 1
Max.: 1.000
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 8.1 A 233.9 mOhms - 7 V, + 20 V 5.1 V 7.9 nC - 55 C + 175 C 80 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 79In Stock
1.000Expected 17/12/2026
Cut Tape
Rp209.327,86
Rp148.052,22
Rp123.285,12
Rp109.892,54
Reel
Rp102.737,60
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 39.6 mOhms - 7 V, + 20 V 5.1 V 8.1 nC - 55 C + 175 C 250 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 258In Stock
1.000Expected 19/11/2026
Cut Tape
Rp172.085,48
Rp117.597,86
Rp96.866,88
Rp86.409,66
Reel
Rp80.905,86
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 41 A 52.6 mOhms - 7 V, + 20 V 5.1 V 30 nC - 55 C + 175 C 205 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 227In Stock
2.000Expected 03/12/2026
Cut Tape
Rp150.620,66
Rp106.039,88
Rp85.859,28
Rp76.319,36
Reel
Rp67.513,28
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 29 A 78.1 mOhms - 7 V, + 20 V 5.1 V 20.6 nC - 55 C + 175 C 158 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 582In Stock
4.000On Order
Cut Tape
Rp118.515,16
Rp77.603,58
Rp57.239,52
Rp50.818,42
Reel
Rp44.947,70
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 14.9 A 181.4 mOhms - 7 V, + 20 V 5.1 V 9.7 nC - 55 C + 175 C 94 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
1.999Expected 19/11/2026
Cut Tape
Rp372.790,72
Rp278.492,28
Rp240.882,98
Rp228.040,78
Reel
Rp212.997,06
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
2.000Expected 03/12/2026
Cut Tape
Rp130.990,44
Rp87.693,88
Rp70.448,64
Rp62.559,86
Reel
Rp55.404,92
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7 1 Channel 1.2 kV 21.2 A 115.7 mOhms - 7 V, + 20 V 5.1 V 14.4 nC - 55 C + 175 C 123 W Enhancement