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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
Rp588.723
-
1.054In Stock
|
Mouser Part No
726-IMBG120R008M2HXT
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Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.054In Stock
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Rp588.723
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Rp502.130
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|
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Rp439.203
|
|
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Rp439.203
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Min.: 1
Mult.: 1
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SMD/SMT
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TO-263-7
|
N-Channel
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1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
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- 55 C
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+ 175 C
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800 W
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Enhancement
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|
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
Rp409.116
-
1.189In Stock
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Mouser Part No
726-IMBG120R012M2HXT
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Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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|
1.189In Stock
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Rp409.116
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Rp334.815
|
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Rp295.738
|
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Rp295.738
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Min.: 1
Mult.: 1
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.2 kV
|
144 A
|
12.2 mOhms
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- 7 V, + 20 V
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5.1 V
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124 nC
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- 55 C
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+ 175 C
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600 W
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Enhancement
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
Rp312.799
-
3.648In Stock
|
Mouser Part No
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3.648In Stock
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|
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Rp312.799
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Rp250.423
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Rp216.483
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Rp216.483
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Min.: 1
Mult.: 1
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SMD/SMT
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TO-263-7
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N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
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+ 175 C
|
470 W
|
Enhancement
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
Rp272.805
-
433In Stock
|
Mouser Part No
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
433In Stock
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|
Rp272.805
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Rp203.824
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Rp176.122
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Rp166.765
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Rp141.631
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Min.: 1
Mult.: 1
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SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
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Enhancement
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
Rp225.472
-
1.900In Stock
|
Mouser Part No
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.900In Stock
|
|
|
Rp225.472
|
|
|
Rp183.460
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|
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Rp152.822
|
|
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Rp136.311
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Rp115.580
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Min.: 1
Mult.: 1
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SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
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+ 175 C
|
335 W
|
Enhancement
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|
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
Rp174.837
-
475In Stock
|
Mouser Part No
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
475In Stock
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|
Rp174.837
|
|
|
Rp132.458
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Rp110.443
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|
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Rp98.335
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Rp87.694
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Min.: 1
Mult.: 1
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|
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SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
Rp129.523
-
1.651In Stock
|
Mouser Part No
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.651In Stock
|
|
|
Rp129.523
|
|
|
Rp94.665
|
|
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Rp76.686
|
|
|
Rp68.064
|
|
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Rp58.340
|
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Min.: 1
Mult.: 1
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SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
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+ 175 C
|
158 W
|
Enhancement
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
Rp111.360
-
752In Stock
|
Mouser Part No
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
752In Stock
|
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|
Rp111.360
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|
|
Rp77.787
|
|
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Rp62.927
|
|
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Rp55.772
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Rp47.883
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Min.: 1
Mult.: 1
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SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
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|
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
Rp94.115
-
256In Stock
-
1.000Expected 05/03/2026
|
Mouser Part No
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
256In Stock
1.000Expected 05/03/2026
|
|
|
Rp94.115
|
|
|
Rp62.560
|
|
|
Rp47.516
|
|
|
Rp43.480
|
|
|
Rp36.509
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
Rp86.043
-
259In Stock
-
5.000On Order
|
Mouser Part No
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
259In Stock
5.000On Order
Stock:
259 Can Dispatch Immediately
On Order:
1.000 Expected 05/03/2026
4.000 Expected 19/03/2026
Factory Lead Time:
26 Weeks
|
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|
Rp86.043
|
|
|
Rp56.873
|
|
|
Rp42.746
|
|
|
Rp38.710
|
|
|
Rp32.839
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
Rp152.639
-
9In Stock
-
2.000Expected 11/06/2026
|
Mouser Part No
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
9In Stock
2.000Expected 11/06/2026
|
|
|
Rp152.639
|
|
|
Rp106.957
|
|
|
Rp86.593
|
|
|
Rp81.089
|
|
|
Rp70.449
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|