IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

Results: 44
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package/Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Infineon Technologies IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package 187In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube


Infineon Technologies IGBTs 1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package 889In Stock
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 21 A 106 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies IGBTs 1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package 1.708In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 428 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package 836In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 333 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package 27In Stock
240Expected 01/10/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube


Infineon Technologies IGBTs 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package 441In Stock
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 36 A 176 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 20 A IGBT with anti-parallel diode in TO-247 package 95In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 40 A 136 W - 40 C + 175 C IGBT7 T7 Tube


Infineon Technologies IGBTs 1200 V, 25 A IGBT7 S7 with anti-parallel diode in TO-247 package 475In Stock
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 55 A 250 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 30 A IGBT with anti-parallel diode in TO-247 package 38In Stock
3.360Expected 22/07/2027
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 60 A 188 W - 40 C + 175 C IGBT7 T7 Tube

Infineon Technologies IGBTs 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247 package 34In Stock
1.920On Order
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 357 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247 package 8In Stock
1.440On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 273 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package 5In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package 6In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package 6In Stock
480On Order
Min.: 1
Mult.: 1

IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT7 S7 in TO247PLUS-3pin package 120In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
460Expected 05/11/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO-247-3 HCC package
240Expected 22/10/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 427 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO247-4 package
240Expected 12/11/2026
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 429 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package
240Expected 26/11/2026
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 338 W - 40 C + 175 C IGBT7 H7 Tube