Automotive U-MOSVIII-H Power MOSFETs

Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. These devices feature low on-resistance with proprietary technology using a Cu connector. The Toshiba U-MOSVIII-H Power MOSFETs have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance.

Results: 28
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Packaging
Toshiba MOSFETs PD=50W F=1MHZ AEC-Q101
4.000Expected 07/08/2026
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 7 A 48 mOhms - 20 V, 20 V 4 V 7.1 nC - 55 C + 175 C 50 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 65W 1MHz Automotive; AEC-Q101
4.987Expected 15/01/2027
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT TSON-Advance-8 N-Channel 1 Channel 40 V 20 A 7.1 mOhms - 20 V, 20 V 2.5 V 21 nC + 175 C 65 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR DSOP Advance(WF)M PD=170W F=1MHZ
5.000Expected 10/08/2026
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT DSOP-8 N-Channel 1 Channel 100 V 70 A 4.1 mOhms - 20 V, 20 V 3.5 V 75 nC - 55 C + 175 C 170 W Enhancement Reel, Cut Tape, MouseReel