Results: 137
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
STMicroelectronics MOSFETs N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 5 A 790 mOhms - 25 V, 25 V 2 V 14 nC - 55 C + 150 C 20 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V, 0.1 50 Ohm, 17 A MDmesh Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 17 A 179 mOhms - 25 V, 25 V 3 V 50 nC - 55 C + 150 C 125 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V .0308 Ohm 11A MDmesh V MOS Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11 A 340 mOhms 85 W MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V MDMesh M5 Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17 A 150 mOhms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 125 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Channel 650V 93A 0.019 Ohm Mdmesh M5 Non-Stocked Lead-Time 16 Weeks
Min.: 600
Mult.: 600

Si Through Hole Max247-3 N-Channel 1 Channel 650 V 96 A 19 mOhms - 25 V, 25 V 4 V 350 nC - 55 C + 150 C 625 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 500 Volt 60 Amp Non-Stocked Lead-Time 16 Weeks
Min.: 600
Mult.: 600

Si Through Hole Max247-3 N-Channel 1 Channel 500 V 60 A 50 mOhms - 30 V, 30 V 3 V 266 nC - 65 C + 150 C 560 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6.5 A 630 mOhms MDmesh Tube
STMicroelectronics MOSFETs N-Ch 600 Volt 11 Amp Non-Stocked
Min.: 1.000
Mult.: 1.000
Reel: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 11 A 450 mOhms - 30 V, 30 V - 65 C + 150 C 160 W Enhancement Reel
STMicroelectronics MOSFETs POWER MOSFET N-CH 650V Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 95 mOhms - 25 V, 25 V 4 V 72 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel
STMicroelectronics MOSFETs N-CH 800V IPAK DPAK Mdmesh PWR MOSFET Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms - 30 V, 30 V 4 V 18 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V 0.56 Ohm 7A MDmesh M5 PWR MO Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7 A 600 mOhms - 25 V, 25 V 3 V 15 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 600 V 0.27ohms 13A Mdmesh Non-Stocked Lead-Time 16 Weeks
Min.: 600
Mult.: 600
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 13 A 260 mOhms - 25 V, 25 V 2 V 35 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube