IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Minimum Operating Temperature Maximum Operating Temperature Technology Packaging
Infineon Technologies IGBT Modules 2300 V, 1800 A dual IGBT module
2In Stock
Rp23.776.416
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module 17In Stock
Rp2.450.475
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 450 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 6In Stock
Rp5.049.553
Rp4.039.422
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 890 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module 33In Stock
Rp3.203.579
Rp3.165.235
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 51In Stock
Rp3.997.960
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 11In Stock
50Expected 23/02/2027
Rp4.692.907
Rp3.790.834
Min.: 1
Mult.: 1
No
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 300 A dual IGBT module 5In Stock
20On Order
Rp2.302.790
Rp2.175.102
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 300 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1700 V, 750 A dual IGBT module 4In Stock
Rp4.320.300
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.7 kV 1.7 V 750 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules PP IHM I
Non-Stocked Lead-Time 39 Weeks
Rp24.458.887
Min.: 3
Mult.: 3
Si Tray
Infineon Technologies IGBT Modules 1200 V, 750 A dual IGBT module Non-Stocked Lead-Time 24 Weeks
Rp3.418.043
Min.: 10
Mult.: 10
IGBT Silicon Modules Dual 1.2 kV 1.5 V 750 A 100 nA - 40 C + 175 C Si Tray