APSx Double-Data-Rate Octal SPI PSRAMs

AP Memory APSx Double-Data-Rate (DDR) Octal SPI PSRAMs feature a 1.62VDD to 1.98VDD single supply voltage range, clock rate up to 200MHz (400MBps read/write throughput), and software reset. These devices also feature Data Mask (DM) for a write operation, a Data Strobe (DQS) for a high-speed read operation, and an output driver LVCMOS with programmable drive strength. The Octal SPI with DDR OctaRAM mode PSRAMs are byte-addressable and operate between -40°C to 85°C temperature range. These devices are available in mini-BGA 24L 6mm x 8mm x 1.2mm package.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Type Memory Size Data Bus Width Maximum Clock Frequency Package/Case Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Series Packaging
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) 568In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz BGA-24 8 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 85 C Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24 3.035In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 250 MHz BGA-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) 859In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit 200 MHz BGA-24 64 M x 8 1.62 V 1.98 V - 40 C + 85 C Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) Non-Stocked Lead-Time 20 Weeks
Min.: 4.800
Mult.: 4.800

PSRAM (Pseudo SRAM) 256 Mbit 8 bit 200 MHz BGA-24 32 M x 8 6.5 ns 1.62 V 1.98 V - 40 C + 85 C Tray