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AFGHL50T65RQDN

Name: onsemi AFGHL50T65RQDN
Brand: onsemi
SKU: 863-AFGHL50T65RQDN
Price: 124202 IDR
Availability: InStock

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Mouser No:

863-AFGHL50T65RQDN

Mfr. No:

AFGHL50T65RQDN

Mfr.:

onsemi

Description:

IGBTs IGBT - 650 V 50 A - Short circuit rated FS4 - Automotive qualified

Datasheet:

AFGHL50T65RQDN Datasheet

ECAD Model:

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In Stock: 354

Stock:: 354 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp124.202	Rp124.202
	Rp71.366	Rp713.660
	Rp60.725	Rp7.287.000
	Rp57.790	Rp29.472.900

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	78 A
Pd - Power Dissipation:	346 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	AFGHL50T65RQDN
Packaging:	Tube
Brand:	onsemi
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs

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Datasheet

AFGHL50T65RQDN Datasheet

Material Composition Disclosure

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

FS4 IGBTs

onsemi FS4 IGBTs are a powerful and efficient solution for various industrial and automotive applications. The onsemi FS4 has a maximum junction temperature of 175°C. These IGBTs are built to withstand even the harshest operating conditions.

AFGHL50T65RQDN 650V 50A IGBT

onsemi AFGHL50T65RQDN 650V 50A IGBT is a 4th generation field-stop IGBT that utilizes innovative technology. The onsemi AFGHL50T65RQDN provides optimal performance for solar inverters, UPS, welders, telecom, ESS, and PFC applications. The device ensures minimal conduction and switching losses.