NVNJWS200N031LTAG

onsemi
863-VNJWS200N031LTAG
NVNJWS200N031LTAG

Mfr.:

Description:
MOSFETs SMALL SIGNAL REFRESH - T1 30V (N-CH)

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about onsemi NVNJWS200N031LTAG

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
2.672
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp7.705 Rp7.705
Rp5.430 Rp54.300
Rp4.201 Rp420.100
Rp3.706 Rp1.853.000
Rp3.541 Rp3.541.000
Full Reel (Order in multiples of 3000)
Rp3.541 Rp10.623.000
Rp3.394 Rp20.364.000
Rp3.192 Rp28.728.000
Rp2.972 Rp71.328.000

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-3
N-Channel
1 Channel
30 V
2.2 A
200 mOhms
8 V
1.5 V
1.4 nC
- 55 C
+ 175 C
1.8 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 2.2 ns
Product Type: MOSFETs
Rise Time: 2.6 ns
Series: NVNJWS200N031L
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 10.2 ns
Typical Turn-On Delay Time: 5.2 ns
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NVNJWS200N031L Single N-Channel Power MOSFET

onsemi NVNJWS200N031L Single N-Channel Power MOSFET has a drain-to-source breakdown voltage (V(BR)DSS) of 30V (minimum) and a continuous drain current (ID) rating of 3.3A. The MOSFET features a low RDS(on) of 200mΩ (maximum) (VGS = 4.5V, ID = 1.5A) to minimize conduction losses. It also features a low input capacitance (CISS) of 89pF. The device comes in a wettable flank with an ESD-protected gate. The onsemi NVNJWS200N031L is AEC-Q101 qualified and PAP capable.

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