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GWA40MS120DF4AG

Name: STMicroelectronics GWA40MS120DF4AG
Brand: STMicroelectronics
SKU: 511-GWA40MS120DF4AG
Price: 120900 IDR
Availability: InStock

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Mouser No:

511-GWA40MS120DF4AG

Mfr. No:

GWA40MS120DF4AG

Mfr.:

STMicroelectronics

Description:

IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a

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Datasheet:

GWA40MS120DF4AG Datasheet (PDF)

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In Stock: 568

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp120.900	Rp120.900
	Rp60.725	Rp607.250
	Rp60.542	Rp7.265.040
	Rp52.103	Rp26.572.530
	Rp50.268	Rp51.273.360
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.95 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	536 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	80 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs

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Datasheet

GWA40MS120DF4AG Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GWA40MS120DF4AG Automotive-grade MS Series IGBT

STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT is developed using an advanced proprietary trench gate field-stop structure. This IGBT, part of the MS series, is designed explicitly for inverter systems. Its outstanding short-circuit capability at high bus voltages makes it ideal for such applications. Also, the slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution contribute to safer paralleling operations. The GWA40MS120DF4AG automotive-grade IGBT features a 1200V collector-emitter voltage (V_GE=0V), 40A continuous collector current (T_C=100°C), and a 120A pulse forward current. This IGBT comes in a TO-247 long leads package and operates within the -55°C to 175°C temperature range. Typical applications include auxiliary loads, thermal management, and PTC heaters.