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SIEH4800EW-T1-GE3

Name: Vishay SIEH4800EW-T1-GE3
Brand: Vishay
SKU: 78-SIEH4800EW-T1-GE3
Price: 109526 IDR
Availability: InStock

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Mouser No:

78-SIEH4800EW-T1-GE3

Mfr. No:

SIEH4800EW-T1-GE3

Mfr.:

Vishay

Description:

MOSFETs N-CHANNEL 80-V (D-S) MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SIEH4800EW-T1-GE3 Datasheet

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In Stock: 2.765

Stock:: 2.765 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp109.526	Rp109.526
	Rp76.136	Rp761.360
	Rp55.038	Rp5.503.800
	Rp54.671	Rp27.335.500
	Rp44.581	Rp133.743.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	1.15 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	278 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	3.4 W
Channel Mode:	Enhancement
Brand:	Vishay
Fall Time:	30 ns
Forward Transconductance - Min:	150 S
Product Type:	MOSFETs
Rise Time:	40 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 s
Typical Turn-On Delay Time:	140 ns

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Datasheet

SIEH4800EW-T1-GE3 Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SiEH4800EW 80V TrenchFET® Gen IV N-Channel MOSFET

Vishay / Siliconix SiEH4800EW 80V TrenchFET^® Gen IV N-Channel MOSFET is designed for high-efficiency power switching applications. Housed in a compact PowerPAK^® 8mm x 8mm bond wireless (BWL) package, the SiEH4800EW delivers an exceptionally low on-resistance of 0.00115Ω at a V_GS of 10V, minimizing conduction losses and improving thermal performance. With a maximum continuous drain current of 260A and a low gate charge of 117nC, the Vishay / Siliconix MOSFET is optimized for fast switching and high-current handling, making it ideal for use in synchronous rectification, motor drives, and high-performance DC-DC converters. A rugged design and advanced trench technology ensure reliable operation in demanding environments.