SIEH4800EW-T1-GE3

Name: Vishay SIEH4800EW-T1-GE3
Brand: Vishay
SKU: 78-SIEH4800EW-T1-GE3
Price: 121267 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIEH4800EW-T1-GE3

Mfr. No:

SIEH4800EW-T1-GE3

Mfr.:

Vishay

Description:

MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SIEH4800EW-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay SIEH4800EW-T1-GE3

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	1.15 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	278 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	3.4 W
Channel Mode:	Enhancement
Brand:	Vishay
Fall Time:	30 ns
Forward Transconductance - Min:	150 S
Product Type:	MOSFETs
Rise Time:	40 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 s
Typical Turn-On Delay Time:	140 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIEH4800EW-T1-GE3 Datasheet

This functionality requires JavaScript to be enabled.

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiEH4800EW 80V TrenchFET® Gen IV N-Channel MOSFET

Vishay / Siliconix SiEH4800EW 80V TrenchFET^® Gen IV N-Channel MOSFET is designed for high-efficiency power switching applications. Housed in a compact PowerPAK^® 8mm x 8mm bond wireless (BWL) package, the SiEH4800EW delivers an exceptionally low on-resistance of 0.00115Ω at a V_GS of 10V, minimizing conduction losses and improving thermal performance. With a maximum continuous drain current of 260A and a low gate charge of 117nC, the Vishay / Siliconix MOSFET is optimized for fast switching and high-current handling, making it ideal for use in synchronous rectification, motor drives, and high-performance DC-DC converters. A rugged design and advanced trench technology ensure reliable operation in demanding environments.