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NDSH40120CDN

Name: onsemi NDSH40120CDN
Brand: onsemi
SKU: 863-NDSH40120CDN
Price: 302159 IDR
Availability: InStock

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Mouser No:

863-NDSH40120CDN

Mfr. No:

NDSH40120CDN

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO

Datasheet:

NDSH40120CDN Datasheet

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Learn more about onsemi NDSH40120CDN

In Stock: 1.198

Stock:: 1.198 Can Dispatch Immediately

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Factory Lead Time:: 11 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp302.159	Rp302.159
	Rp211.346	Rp2.113.460
	Rp186.395	Rp18.639.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3LD
Configuration:	Dual Anode Common Cathode
If - Forward Current:	52 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.36 V
Ifsm - Forward Surge Current:	123 A
Ir - Reverse Current:	2.39 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	NDSH40120CDN
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	217 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	450
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	1.2 kV

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Datasheet

NDSH40120CDN Datasheet

Material Composition Disclosure

CNHTS:: 8541590000
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

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onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

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NDSH40120CDN Silicon Carbide (SiC) SCHOTTKY Diode

onsemi NDSH40120CDN Silicon Carbide (SiC) SCHOTTKY Diode provides superior switching performance and higher reliability than Silicon. The onsemi diode has no reverse recovery current, temperature-independent switching characteristics and excellent thermal performance. System benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.