CGHV14800F

Name: MACOM CGHV14800F
Brand: MACOM
SKU: 941-CGHV14800F
Price: 28696263 IDR
Availability: OutOfStock

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Mouser No:

941-CGHV14800F

Mfr. No:

CGHV14800F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 1.2-1.4GHz, 800 Watt

Datasheet:

CGHV14800F Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp28.696.263	Rp286.962.630

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	440117
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	24 A
Vgs th - Gate-Source Threshold Voltage:	- 3.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 100 C
Brand:	MACOM
Development Kit:	CGHV14800F-TB
Gain:	14 dB
Maximum Operating Frequency:	1.4 GHz
Minimum Operating Frequency:	1.2 GHz
Output Power:	800 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	71 g

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Datasheet

CGHV14800F Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

CGHV14800 GaN HEMT

MACOM CGHV14800F 800W Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) is designed specifically for high efficiency, high gain, and wide bandwidth capabilities. The module is ideal for 1.2GHz to 1.4GHz L-band radar amplifier applications, such as air traffic control (ATC), weather, penetration, and military. MACOM CGHV14800F GaN HEMT operates at 50V, typically delivering more than 65% drain efficiency. This device is supplied in a ceramic/metal flange type 440117 package.