EVSTDRIVEG600DM

STMicroelectronics
511-EVSTDRIVEG600DM
EVSTDRIVEG600DM

Mfr.:

Description:
Power Management IC Development Tools Demonstration board for STDRIVEG600 600V half-bridge high-speed gate driver
Complete Your Design

Datasheet:
More Information
Learn more about STMicroelectronics EVSTDRIVEG600DM

Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp1.516.664 Rp1.516.664

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Power Management IC Development Tools
RoHS:  
Demonstration Boards
Gate Driver
4.75 V to 20 V
STDRIVEG600
Brand: STMicroelectronics
Packaging: Bulk
Product Type: Power Management IC Development Tools
Factory Pack Quantity: 1
Subcategory: Development Tools
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

USHTS:
9030890100
TARIC:
8473302000
ECCN:
EAR99

EVSTDRIVEG600DM Demonstration Board

STMicroelectronics EVSTDRIVEG600DM Demonstration Board provides a Half-Bridge topology reference design pairing the STDRIVEG600 Gate Driver with an MDmesh™ DM2 Power MOSFET. The STDRIVEG600 is a single-chip half-bridge gate driver for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V.  

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.